Modal analysis and engineering on InP-based two-dimensional photonic-crystal microlasers on a Si wafer

We report results on hexagonal-shaped microlasers formed from two-dimensional photonic crystals (PCs) using InP-based materials transferred and bonded onto SiO/sub 2// Si wafers. Two types of hexagonal cavities are investigated : single defect (one hole missing) cavities, so-called H1 cavities (1 /s...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2003-03, Vol.39 (3), p.419-425
Main Authors: Monat, C., Seassal, C., Letartre, X., Regreny, P., Pedro Rojo-Romeo, Viktorovitch, P., d'Yerville, M.L.V., Cassagne, D., Albert, J.P., Jalaguier, E., Pocas, S., Aspar, B.
Format: Article
Language:English
Subjects:
Crystalline materials
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Holes
Laser modes
Lasers
Microcavity and microdisk lasers
Microlasers
Modal analysis
Optical materials
Optical pulses
Optical pumping
Optics
Personal communication networks
Photonic crystals
Physics
Plane waves
Pulse measurements
Pump lasers
Silicon
Two dimensional
Wafers
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Summary:We report results on hexagonal-shaped microlasers formed from two-dimensional photonic crystals (PCs) using InP-based materials transferred and bonded onto SiO/sub 2// Si wafers. Two types of hexagonal cavities are investigated : single defect (one hole missing) cavities, so-called H1 cavities (1 /spl mu/m in diameter) and two holes missing per side H2 cavities (2 /spl mu/m in diameter). Their optical properties are analyzed using photoluminescence experiments, and plane wave method simulations have been performed for comparison. High Q modes (/spl sim/600/700) have been measured and they have been shown to enable laser effect at room temperature, under pulsed optical pumping (15% duty cycle and 25-ns pulsewidth). The study of these efficient mode characteristics gives guidance for further improvement of the operation conditions of PC lasers, such as the reduction of the threshold pumping power.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2002.808182