Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon

The correlation between the spatially resolved carrier lifetime of multicrystalline silicon and the spatially resolved monochromatic solar cell efficiency is investigated by means of microwave-detected photoconductance decay (MW-PCD) measurements and illuminated lock-in thermography (ILIT). Local mo...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2008-12, Vol.19 (Suppl 1), p.4-8
Main Authors: Ramspeck, K., Bothe, K., Schmidt, J., Brendel, R.
Format: Article
Language:English
Subjects:
Applied sciences
Characterization and Evaluation of Materials
Chemistry and Materials Science
Efficiency
Electronics
Energy
Exact sciences and technology
Imaging devices
Lifetime
Materials
Materials Science
Natural energy
Optical and Electronic Materials
Optoelectronic devices
Photovoltaic cells
Photovoltaic conversion
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:The correlation between the spatially resolved carrier lifetime of multicrystalline silicon and the spatially resolved monochromatic solar cell efficiency is investigated by means of microwave-detected photoconductance decay (MW-PCD) measurements and illuminated lock-in thermography (ILIT). Local monochromatic solar cell efficiencies are determined from ILIT measurements under short-circuit conditions and at the maximum power point of the cell. The resulting efficiency images are compared with efficiency images obtained from MW-PCD lifetime images of unprocessed neighbouring wafers using PC1D simulations. We observe a qualitative correlation between the measured and the simulated efficiency images. Areas with reduced efficiency are found in the same locations using both methods. However, the dynamic range in the monochromatic efficiency is larger for the images obtained from ILIT measurements. Possible explanations for this difference are a change in carrier lifetime during cell processing and varying lifetimes on microscopic scales, leading to averaging faults in the lifetime images.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-008-9671-8