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Experimental f″ of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms (f″) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at vari...

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Bibliographic Details
Published in:Bulletin of materials science 2002-08, Vol.25 (4), p.325-327
Main Authors: Sudha, G. Raja, Devi, K. Vimala, Arthi, D., Subramanian, S. Prasanna, Srinivasan, N., Saravanan, R.
Format: Article
Language:English
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Summary:Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms (f″) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at various temperatures, i.e. 170, 200, 250 and 300 K. It is stressed that more measurements off″ of the elements are needed to confirm the theoretical calculations.
ISSN:0250-4707
0973-7669
DOI:10.1007/BF02704126