Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls

We successfully fabricated nitride-based light-emitting diodes (LEDs) with ∼22° undercut sidewalls. The ∼22° etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with ∼22° undercut sidew...

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Bibliographic Details
Published in:IEEE photonics technology letters 2005-01, Vol.17 (1), p.19-21
Main Authors: Chih-Chiang Kao, Hao-Chung Kuo, Hung-Wen Huang, Jung-Tang Chu, Yu-Chun Peng, Hsieh, Y.-L., Luo, C.Y., Shing-Chung Wang, Chang-Chin Yu, Chia-Feng Lin
Format: Article
Language:English
Subjects:
Brightness
Computer displays
Etching
Etching profile
Gallium nitride
GaN
Light emitting diodes
light extraction efficiency
light-emitting diode (LED)
Optical materials
Plasma applications
Power generation
Quantum well devices
Refractive index
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Summary:We successfully fabricated nitride-based light-emitting diodes (LEDs) with ∼22° undercut sidewalls. The ∼22° etching undercut sidewalls were achieved by controllable inductively coupled plasma reactive ion etching. With a 20-mA current injection, the output powers of the LED with ∼22° undercut sidewalls and standard LED were 5.1 and 3 mW, respectively - a factor of 1.7 times enhancement. It was found that such undercut sidewalls could enhance the probability of escaping the photons outside from the LED in the near horizontal and in-plane directions. This simple and controllable method is beneficial to fabricate brighter LEDs.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2004.837480