Effect of Structures of NiFe-Based Free Layers on Writing Properties in Toggle MRAMs

The toggle writing of NiFe-based free layers grown on amorphous-AlO and MgO(001) barriers was investigated. The polycrystalline orientation was shown to explain behaviors of the saturation and spin-flop fields and their thermal endurances. To obtain small variations of these with high thermal robust...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2007-06, Vol.43 (6), p.2343-2345
Main Authors: Fukumoto, Y., Kasai, N.
Format: Article
Language:English
Subjects:
AlO
Antiferromagnetic materials
Automatic frequency control
Barriers
Cross-disciplinary physics: materials science
rheology
Durability
Exact sciences and technology
Iron
Magnetic anisotropy
Magnetic tunneling
Magnetism
Magnetoresistive random access memory
Magnetostriction
Materials science
MgO
MTJ
NiFe
Orientation
Other topics in materials science
Perpendicular magnetic anisotropy
Physics
Robustness
Saturation
Saturation magnetization
synthetic antiferromagnet (SAF)
toggle MRAM
Writing
writing field
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Summary:The toggle writing of NiFe-based free layers grown on amorphous-AlO and MgO(001) barriers was investigated. The polycrystalline orientation was shown to explain behaviors of the saturation and spin-flop fields and their thermal endurances. To obtain small variations of these with high thermal robustness, a fully promoted NiFe(111)/Ru(001) orientation was important
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2007.893522