An Empirical Large-Signal Model for SiC MESFETs With Self-Heating Thermal Model

An empirical large-signal model for high-power microwave silicon-carbide MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain-current equation based on pulsed-gate IV characteristics measuring up to 2 A and 58 V is presented along with its dependence on tempe...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2008-11, Vol.56 (11), p.2671-2680
Main Authors: Yuk, K.S., Branner, G.R.
Format: Article
Language:English
Subjects:
Applied sciences
Current voltage characteristics
Electrical resistance measurement
Electronics
Empirical analysis
Exact sciences and technology
Frequency
Mathematical analysis
Mathematical models
MESFET
MESFETs
Microwave and submillimeter wave devices, electron transfer devices
Microwaves
nonlinear
Nonlinear equations
Predictive models
Pulse measurements
self-heating
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
silicon-carbide (SiC)
Temperature dependence
thermal
Thermal resistance
Voltage
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Summary:An empirical large-signal model for high-power microwave silicon-carbide MESFETs capable of predicting self-heating thermal behavior is presented. A generalized drain-current equation based on pulsed-gate IV characteristics measuring up to 2 A and 58 V is presented along with its dependence on temperature. A thermal subcircuit with a nonlinear thermal resistance characterized by a dc method is used to model the temperature behavior of the device. The effect of substrate trapping is modeled as a gate-source voltage correction. The complete drain-current model accurately predicts pulsed-gate and pulsed-gate-and-drain IV characteristics for various quiescent biases, as well as static IV characteristics. The complete large-signal model is shown to accurately predict S -parameters, large-signal output, and input reflected power across biases and frequencies, and third-order intermodulation products.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2008.2005922