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Electronic and Optical Properties of Mg^sub x^Zn^sub 1-x^O and Be^sub x^Zn^sub 1-x^O Quantum Wells

As a preparatory step toward establishing reliable numerical design tools for ZnO-based optoelectronic devices, we have reassessed the available information on material parameters relevant for the simulation of light-emitting diodes (LEDs) with active regions including ZnO, MgZnO, and BeZnO layers....

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Bibliographic Details
Published in:Journal of electronic materials 2010-07, Vol.39 (7), p.936
Main Authors: Furno, Enrico, Chiaria, Simone, Penna, Michele, Bellotti, Enrico, Goano, Michele
Format: Article
Language:English
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Summary:As a preparatory step toward establishing reliable numerical design tools for ZnO-based optoelectronic devices, we have reassessed the available information on material parameters relevant for the simulation of light-emitting diodes (LEDs) with active regions including ZnO, MgZnO, and BeZnO layers. The impact of different approximations for the electronic structure and the interface polarization charge on the optical properties of bulk ZnO and ZnO/MgZnO quantum wells has been evaluated, and a consistent set of parameters has been used not only for systematic comparison of ZnO/MgZnO and ZnO/BeZnO single quantum well structures but also for the first simulation of a realistic ZnO/BeZnO multiple quantum well LED. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X