Multifunctional ZnO-Based Thin-Film Bulk Acoustic Resonator for Biosensors

Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg x Zn 1− x O) are piezoelectric materials that can be used for high-quality-factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Thin-film bulk acoustic resonators (TFBARs) are attractive for applications in advanced...

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Bibliographic Details
Published in:Journal of electronic materials 2009-08, Vol.38 (8), p.1605-1611
Main Authors: Chen, Ying, Reyes, Pavel I., Duan, Ziqing, Saraf, Gaurav, Wittstruck, Richard, Lu, Yicheng, Taratula, Olena, Galoppini, Elena
Format: Article
Language:English
Subjects:
Biosensors
Characterization and Evaluation of Materials
Chemical compounds
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Chemistry and Materials Science
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Dielectric, piezoelectric, ferroelectric and antiferroelectric materials
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Electronics and Microelectronics
Exact sciences and technology
Instrumentation
Materials Science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of nanofabrication
Nanostructured materials
Optical and Electronic Materials
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Semiconductors
Solid State Physics
Thin films
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Summary:Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg x Zn 1− x O) are piezoelectric materials that can be used for high-quality-factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Thin-film bulk acoustic resonators (TFBARs) are attractive for applications in advanced communication and in various sensors as they offer the capability of monolithic integration of BAW resonators with radio-frequency integrated circuits (RF ICs). In this paper we report Mg x Zn 1− x O-based TFBAR biosensors. The devices are built on Si substrates with an acoustic mirror consisting of alternating quarter-wavelength silicon dioxide (SiO 2 ) and tungsten (W) layers to isolate the TFBAR from the Si substrate. High-quality ZnO and Mg x Zn 1− x O thin films are achieved through a radio-frequency (RF) sputtering technique. Tuning of the device operating frequency is realized by varying the Mg composition in the piezoelectric Mg x Zn 1− x O layer. Simulation results based on a transmission-line model of the TFBAR show close agreement with the experimental results. ZnO nanostructures are grown on the TFBAR’s top surface using metal- organic chemical vapor deposition (MOCVD) to form the nano-TFBAR sensor, which offers giant sensing area, faster response, and higher sensitivity over the planar sensor configuration. Mass sensitivity higher than 10 3  Hz cm 2 /ng is achieved. In order to study the feasibility of the nano-TFBAR for biosensing, the nanostructured ZnO surfaces were functionalized to selectively immobilize␣DNA, as verified by hybridization with its fluorescence-tagged DNA complement.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-009-0813-4