Capacitance reduction in AlGaN/GaN heterojunction diodes through thermally oxidized NiO anode

Abstract In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed. NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two-dimensional electron gas in the anode region of the device. Combined with the etching-free technology, the damage...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-09, Vol.63 (9), p.94003
Main Authors: Li, Qiuen, Kang, Xuanwu, Wu, Hao, Zhao, Rikang, Zheng, Yingkui, Shang, Hengyu, Liu, Xinyu, Huang, Chengjun
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitrides
Barrier layers
Capacitance
Current leakage
Electron gas
Etching
Gallium nitrides
Heterojunctions
low capacitance
Nickel oxides
NiO
Schottky diodes
thin barrier diode
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Summary:Abstract In this study, a thin barrier AlGaN/GaN heterojunction diode with a NiO anode is proposed. NiO as an anode combined with a 5 nm AlGaN barrier layer can significantly deplete two-dimensional electron gas in the anode region of the device. Combined with the etching-free technology, the damage caused by etching the AlGaN barrier layer is successfully avoided. The capacitance of the device was reduced from 28 pF mm −1 (Schottky) to 966 fF/mm (NiO) which reduced 97%. At the same time the NiO anode devices with a reverse current leakage of ~10 −8 A/mm@−100V achieved a high current ON/OFF ratio of ~10 -8 . NiO not only reduces the capacitance and leakage of the device but also enhances its anti-collapse ability. Without using the structure of field plates, the breakdown voltage of the device was also increased compared with the Schottky diode.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad6ed5