Unraveling the Properties of Interdigital Electrode-Based γ-In₂Se₃ Photodetectors for Optimal Performance

We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using the radio frequency (RF)-magnetron sputtering method with optimized parameters. The formation of high-quality \gamma -In2Se3 using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscop...

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Bibliographic Details
Published in:IEEE sensors journal 2024-09, Vol.24 (17), p.27380-27392
Main Authors: Hase, Yogesh, Shah, Shruti, Ladhane, Somnath, Doiphode, Vidya, Punde, Ashvini, Shinde, Pratibha, Rahane, Swati, Kale, Dhanashri, Bade, Bharat, Waghmare, Ashish, Prasad, Mohit, Patole, Shashikant P., Jadkar, Sandesh
Format: Article
Language:English
Subjects:
Bias
Contact resistance
Electric potential
Electrodes
Electrons
Field emission microscopy
Field emission spectroscopy
Incident light
Indium tin oxides
interdigital electrode (IDE)
Light
Luminous intensity
Magnetic properties
Magnetron sputtering
Parameters
Performance evaluation
photodetector
Photodetectors
Photoelectric effect
Photoelectrons
Photometers
radio frequency (RF) magnetron sputtering
Raman spectroscopy
Spectrum analysis
Sputtering
Substrates
Voltage
X ray photoelectron spectroscopy
X-ray scattering
γ-In₂Se
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Summary:We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using the radio frequency (RF)-magnetron sputtering method with optimized parameters. The formation of high-quality \gamma -In2Se3 using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and energy dispersive spectroscopy (EDS) is explored. Subsequently, we fabricated \gamma -In2Se3-based photodetectors on indium tin oxide (ITO)-coated IDE using optimized parameters. The detailed investigation focused on the influence of IDE spacing, bias voltage, and light intensity on the photodetector properties. The photodetector fabricated with an IDE spacing of 335~\mu m exhibited outstanding properties, including the highest photoresponsivity of 14.8~\mu A/W and detectivity of 31.3 \times 10^{{7}} Jones. It also demonstrated a fast rise time of 99 ms and a decay time of 61 ms. In the bias voltage variation study, the \gamma -In2Se3-based photodetectors exhibited a linear relationship between the change in current and the bias potential, indicating the formation of ohmic contact between \gamma -In2Se3 and ITO electrodes. Examining light intensity photoresponse, we varied the power density of light from 5 to 30 mW/cm2. We observed a direct proportionality between the generated photocurrent and the incident light intensity. However, at higher light intensities, there was a decrease in photodetectivity from 3.97\times 10^{{8}} to 1.16 \times 10^{{8}} Jones and a reduction in photoresponsivity from 33.36 to 9.73~\mu A/W for the \gamma -In2Se3-based photodetectors. In conclusion, the photodetector properties of
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2024.3425964