Compact low-noise power amplifier design and implementation for millimetre wave frequencies

In this paper, we have designed and realized a two-stage low-noise power amplifier (LNPA) with resistive feedback network targeting for Ka-band compact RF front-end applications. Featuring the characteristics of both low noise and high power at the same time, the LNPA is expected to be a possible on...

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Bibliographic Details
Published in:IET circuits, devices & systems devices & systems, 2020-10, Vol.14 (7), p.1026-1031
Main Authors: Tsao, Chien-Ming, Tsao, Yi-Fan, Lin, Tzu-Shuen, Huang, Ting-Jui, Hsu, Heng-Tung
Format: Article
Language:English
Subjects:
Amplifier design
Antenna arrays
antenna elements
Antennas
Bandwidths
CMOS integrated circuits
Communication
compact low‐noise power amplifier design
compact RF front‐end
compression output power
configuration features size compactness
Design
field effect MIMIC
frequency 36.0 GHz to 40.0 GHz
GaAs
gallium arsenide
HEMT integrated circuits
High electron mobility transistors
III‐V semiconductors
implementation complexity
Ka‐band
LNPA
Low noise
low noise amplifiers
Millimeter waves
millimetre wave field effect transistors
millimetre wave frequencies
MMIC power amplifiers
Noise levels
output third‐order interception point
pHEMT technology
power 152.0 mW
Power amplifiers
power consumption
Power management
pseudomorphic high electron mobility transistor technology
radio transceivers
Receivers & amplifiers
Research Article
resistive feedback network
Semiconductor devices
size 0.15 mum
transceiver‐receiver module
two‐stage low‐noise power amplifier
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Summary:In this paper, we have designed and realized a two-stage low-noise power amplifier (LNPA) with resistive feedback network targeting for Ka-band compact RF front-end applications. Featuring the characteristics of both low noise and high power at the same time, the LNPA is expected to be a possible one-chip replacement of power and low noise amplifiers integrated in a conventional transceiver/receiver (T/R) module. Such configuration features size compactness while reduces implementation complexity which is of crucial importance for integration in antenna arrays with large number of antenna elements. Implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the LNPA, operating at 36–40 GHz, exhibits a peak gain of 15.96 dB, a minimum noise figure of 2.88 dB, a power consumption of 152 mW and a measured 1-dB compression output power of 14.92 dBm at 38 GHz, respectively. The LNPA also featured a very good linearity performance with a measured output third-order interception point (IP3) of 22.22 dBm at 38 GHz.
ISSN:1751-858X
1751-8598
1751-8598
DOI:10.1049/iet-cds.2020.0274