Temperature Dependence of Electrical Characteristics of ZnO Nanowire Field-Effect Transistors with AZO and Aluminium Source/Drain Contact

In this study, ZnO nanowire field-effect transistor (FET) with an aluminium-doped ZnO (AZO) and an aluminium (Al) dual layer source and drain contact are fabricated and temperature dependent characteristics in the range of 200 – 300 K are analyzed through experimental measurements. The effect of tem...

Full description

Saved in:
Bibliographic Details
Published in:Key engineering materials 2023-05, Vol.947, p.33-38
Main Authors: Packeer Mohamed, Mohamed Fauzi, Ghazali, Nor Azlin, Chong, Harold, Jalaludin Khan, Muhammad Firdaus Akbar
Format: Article
Language:English
Subjects:
Aluminum
Electric contacts
Electrical properties
Field effect transistors
Nanowires
Semiconductor devices
Temperature dependence
Temperature effects
Threshold voltage
Transconductance
Zinc oxide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, ZnO nanowire field-effect transistor (FET) with an aluminium-doped ZnO (AZO) and an aluminium (Al) dual layer source and drain contact are fabricated and temperature dependent characteristics in the range of 200 – 300 K are analyzed through experimental measurements. The effect of temperature on threshold voltage, subthreshold slope, transconductance, and field effect mobility are analysed. The transfer curve exhibits a parallel shift toward a negative gate voltage direction with a negative shift of the threshold voltage, an increase in the subthreshold slope, and a field-effect mobility as the temperature rises. The electrical properties of the transistors demonstrate typical behaviour at various temperatures.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/p-9v2hoh