Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing

This article investigates the effect of hydrostatic pressure on the optoelectronic characteristics of the InAsNBi/InAs quantum well (QW) system using an expanded version of the standard 8-band k dot p Hamiltonian. The effect of hydrostatic pressure on important structural and electronic parameters s...

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Bibliographic Details
Published in:Optical and quantum electronics 2024-07, Vol.56 (8), Article 1291
Main Authors: Jain, Neelesh, Mal, Indranil, Tarek, Hidouri, Samajdar, Dip Prakash
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Computer Communication Networks
Effectiveness
Elastic properties
Electrical Engineering
Energy gap
Heterostructures
Hydrostatic pressure
Indium arsenides
Lasers
Optical Devices
Optical properties
Optics
Optoelectronic devices
Photonics
Physics
Physics and Astronomy
Pressure effects
Quantum wells
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Summary:This article investigates the effect of hydrostatic pressure on the optoelectronic characteristics of the InAsNBi/InAs quantum well (QW) system using an expanded version of the standard 8-band k dot p Hamiltonian. The effect of hydrostatic pressure on important structural and electronic parameters such as elastic constants, band gap, band offset, band structure, and effective masses are investigated in this manuscript. These factors assisted in the computation of optical gain spectra for different quantum well structures. Furthermore, this study is extended to several heterostructures by including diverse barrier materials such as GaAs, GaSb, and InP with InAsNBi QW. The optical analysis of these heterostructures can help the researchers to design and fabricate optoelectronic devices that can operate in LWIR regimes owing to the narrow bandgap of quaternary InAsNBi. Additionally, we examined the optical characteristics in TE mode for variations in hydrostatic pressure.
ISSN:1572-817X
0306-8919
1572-817X
DOI:10.1007/s11082-024-07111-1