High‐Performance Green Quasi‐2D Perovskite Light‐Emitting Diodes via Passivated Defects

In next generation semiconductors, metal halide perovskite materials would replace traditional light‐emitting materials since their exceptional photoelectronic characteristics. The future development of perovskite light‐emitting diodes have generated challenges such as abundant surface or interfacia...

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Bibliographic Details
Published in:Advanced optical materials 2024-05, Vol.12 (13), p.n/a
Main Authors: Yang, Wei, Ban, Xin‐Xin, He, Xiao‐Li, Huang, Xin‐Mei, Wang, Xiao‐Yu, Zhang, Yong, Gao, Chun‐Hong
Format: Article
Language:English
Subjects:
Atomic properties
Benzene
Carrier transport
Defects
defects passivation
Electron clouds
Excitons
Functional groups
Hydrocarbons
Light emitting diodes
metal halide perovskite materials
Metal halides
Oxygen atoms
Perovskites
Phosphine oxide
Photoelectrons
radiative recombination
stability
Surface roughness
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Summary:In next generation semiconductors, metal halide perovskite materials would replace traditional light‐emitting materials since their exceptional photoelectronic characteristics. The future development of perovskite light‐emitting diodes have generated challenges such as abundant surface or interfacial defects and exciton quenching. To overcome these challenges, the light‐emitting layer is modified utilizing benzimidazole/phosphine oxide hybrid 1,3,5‐tris(1‐(4‐(diphenylphenylphosphoryl)phenyl)‐1H‐benzo[d]imidazol‐2‐yl)benzene (TPOB) and 1,3,5‐tris(diphenylphosphoryl)benzene (TPO) with high triple energy state. It is demonstrated by X‐ray photoelectron spectroscopy results that the oxygen atoms in the P = O functional group of TPOB and TPO provided lone electron pairs coordinate to the unsaturated Pb2+ in turn led to a decrease in the electron cloud density of Pb2+ and Br‐, which can suppress defects. Additionally, this technique improved the morphology of film, reduced surface roughness, and facilitated carrier transport, all of which are crucial for achieving high‐emission efficiency. As a result, the optimal devices has EQEs of 16.20 (TPOB) and 20.48% (TPO), respectively. Furthermore, the devices demonstrated excellent reproducibility. Excitingly, the champion EQE value for the optimal device is 22.64%. Simultaneously, it can increase the stability of the devices and the lifetimes are increased from 1231 s (Pristine) to 5421 (TPOB) and 5631 s (TPO). The authors employ TPOB and TPO to modify the perovskite light‐emitting layer. Primarily, it has the potential to enhance hole transport performance by improving film morphology and lowering surface roughness. Subsequently, it can passivate defects and partially eliminate the adverse effects of defects. Furthermore, it has been discovered that their approach can extend the lifetime and improve the photoelectric performance of PeLEDs.
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.202302664