Improvement of physical properties of spin coated Ag2ZnSnS4 thin films synthesis by sol gel spin coating route

In this paper, thin films of Ag 2 ZnSnS 4 (AZTS) were spin-coated on to ordinary glass substrates and annealed at temperatures ranging from 300 to 375 °C without sulfurization. Characterization techniques like X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Raman Spectroscopy (RS), Ener...

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Bibliographic Details
Published in:Journal of sol-gel science and technology 2024-02, Vol.109 (2), p.295-309
Main Authors: Ziti, Ahmed, Hartiti, Bouchaib, Smairi, Salma, Nouri, Youssef, Labrim, Hicham, Nkuissi, Hervé Joël Tchognia, Batan, Abdelkrim, Arba, Youssef, Belafhaili, Amine, Fadili, Salah, Tahri, Mounia, Thevenin, Philippe
Format: Article
Language:English
Subjects:
Absorptivity
Annealing
Ceramics
Chemistry and Materials Science
Composites
Glass
Glass substrates
Inorganic Chemistry
Materials Science
Morphology
Nanotechnology
Natural Materials
Optical and Electronic Materials
Original Paper
Photomicrographs
Physical properties
Raman spectra
Raman spectroscopy
Scanning electron microscopy
Sol-gel processes
Spectrophotometry
Spectrum analysis
Spin coating
Sulfurization
Synthesis
Thin films
X-ray diffraction
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Summary:In this paper, thin films of Ag 2 ZnSnS 4 (AZTS) were spin-coated on to ordinary glass substrates and annealed at temperatures ranging from 300 to 375 °C without sulfurization. Characterization techniques like X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Raman Spectroscopy (RS), Energy Dispersive X-ray Spectroscopy (EDS), and UV-Vis spectrophotometry were used to investigate the different physical properties of AZTS thin films. The analyses of XRD and Raman patterns showed that AZTS thin films have a polycrystalline structure with peaks corresponding to the pure tetragonal phase. SEM micrographs showed a nearly uniform, dense, and compact surface morphology for AZTS thin film annealed at 375 °C. The films showed absorption coefficients greater than 10 4  cm −1 with band gaps found between 1.50 and 1.59 eV. These properties make AZTS thin films a suitable absorber layer for photovoltaic applications. Highlights Synthesis and characterization of Ag 2 ZnSnS 4 thin films by sol-gel method associated to spin coating technique. Study the effect of annealing temperature on some physical properties. XRD data and Raman scattering measurements indicated the formation of pure Ag 2 ZnSnS 4 . Compositional and morphological show that Ag 2 ZnSnS 4 thin films can be suitable for photovoltaic applications.
ISSN:0928-0707
1573-4846
DOI:10.1007/s10971-023-06258-9