Tunable Contacts of Bi2O2Se Nanosheets MSM Photodetectors by Metal‐Assisted Transfer Approach for Self‐Powered Near‐Infrared Photodetection

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal–semiconductor contact is always independent on the work function, which challenges the next‐generation optoelectronic devices. In this work, a metal‐assisted transfer approach is developed to transfer Bi2O2Se n...

Full description

Saved in:
Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-02, Vol.20 (8), p.n/a
Main Authors: Wang, Guangcan, Liu, Fengjing, Chen, Ruichang, Wang, Mingxu, Yin, Yanxue, Zhang, Jie, Sa, Zixu, Li, Pengsheng, Wan, Junchen, Sun, Li, Lv, Zengtao, Tan, Yang, Chen, Feng, Yang, Zai‐xing
Format: Article
Language:English
Subjects:
Bi2O2Se nanosheets
Dark current
Electrodes
Infrared detectors
Low dimensional semiconductors
metal‐assisted transfer approach
metal–semiconductor contact
Nanosheets
near‐infrared photodetection
Optoelectronic devices
Photometers
self‐powered photodetection
Substrates
Work functions
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal–semiconductor contact is always independent on the work function, which challenges the next‐generation optoelectronic devices. In this work, a metal‐assisted transfer approach is developed to transfer Bi2O2Se nanosheets onto the pre‐deposited metal electrodes, benefiting to the tunable metal–semiconductor contact. The success in Bi2O2Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre‐deposited asymmetric electrodes, the self‐powered near‐infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight/Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre‐depositing the metal electrodes on polyimide and glass, high‐performance flexible and omnidirectional self‐powered near‐infrared photodetectors are achieved successfully. This study opens up new opportunities for low‐dimensional semiconductors in next‐generation high‐performance optoelectronic devices. By adopting the metal‐assisted transfer approach, tunable metal–semiconductor contacts of Ohmic contact, Schottky contact, and asymmetric contact are achieved in Bi2O2Se nanosheet MSM photodetectors. With the asymmetric contact, the MSM photodetector displays the typical self‐powered NIR photodetection behaviors with a low dark current of 0.04 pA, and high Ilight/Idark ratio of 380.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202306363