Investigation of Quantum Mechanical Effects in Back Gated Molybdenum Disulfide Transistor

This paper examines the quantum model for a single gate Molybdenum Disulfide (MoS 2 ) Field Effect Transistor (FET) based on Ritz Galerkin Finite Element Method (RG FEM), by using the coupled Poisson-Schrödinger equations. The impact of quantum confinement effect over the potential in the channel’s...

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Bibliographic Details
Published in:SILICON 2022-12, Vol.14 (18), p.12185-12190
Main Authors: R, Sridevi, J, Charles Pravin, A, Ramesh Babu, S, Ashok Kumar
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Communication
Electrons
Energy
Engineering
Environmental Chemistry
Field effect transistors
Finite element analysis
Finite element method
Galerkin method
Inorganic Chemistry
Investigations
Lasers
Materials Science
Mathematical models
Molybdenum
Molybdenum disulfide
Optical Devices
Optics
Original Paper
Photonics
Polymer Sciences
Quantum confinement
Quantum mechanics
Schrodinger equation
Semiconductor devices
Transistors
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Summary:This paper examines the quantum model for a single gate Molybdenum Disulfide (MoS 2 ) Field Effect Transistor (FET) based on Ritz Galerkin Finite Element Method (RG FEM), by using the coupled Poisson-Schrödinger equations. The impact of quantum confinement effect over the potential in the channel’s perpendicular direction is evaluated in the mono-layer device. It is essential to consider quantum confinement effects for the device when operating at a low channel length of 20 nm. The confinement of electrons induces a relatively large potential when compared to that of classical method. Furthermore, unlike other basic models, including the Ritz Galerkin Finite Element Technique into the analytical model requires only two iterations to determine the potential.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-022-01892-4