Determination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer

5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted separately with chitin. The synthesized products were characterized by various spectroscopic methods (FTIR, NMR and XRD) and were abbreviated as C524D2FA and CA2CA, respectively. The surface of the chitin derivativ...

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Bibliographic Details
Published in:SILICON 2021-12, Vol.13 (12), p.4703-4713
Main Authors: Uzun, İlhan, Orak, İkram, Yağmur, Hatice Karaer, Karakaplan, Mehmet, Yalman, Murat
Format: Article
Language:English
Subjects:
Acids
Aluminum
Anthraquinones
Carboxylic acids
Cellulose
Chemistry
Chemistry and Materials Science
Chitin
Circuits
Construction
Diodes
Education
Electrons
Environmental Chemistry
Furoic acid
Hydrocarbons
Inorganic Chemistry
Lasers
Materials Science
NMR
Nuclear magnetic resonance
Optical Devices
Optics
Original Paper
Photoelectricity
Photonics
Polymer Sciences
Schottky diodes
Silicon
Synthesis
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Summary:5-(2,4-dichlorophenyl)-2-furoic acid and anthraquinone-2-carboxylic acid were reacted separately with chitin. The synthesized products were characterized by various spectroscopic methods (FTIR, NMR and XRD) and were abbreviated as C524D2FA and CA2CA, respectively. The surface of the chitin derivatives, pulverized by pounding in mortar, was examined by SEM technique. Then, two different diodes were made by using these chitin derivatives as an interface layer. Al as metal and p-Si as semiconductor were used in the construction of the diodes. Some important properties of these diodes made were determined both in the dark and under an illumination of 100 mW/cm 2 . The Al/CA2CA/p-Si diode has been found to be more ideal than the Al/C524D2FA/p-Si diode conducted in this study and many other diodes made using Al and p-Si in other studies up to now.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-020-00779-6