Electrochemical-based studies of Cu2SnSe3 nanocrystals and P3HT:PCBM for hybrid solar cells

In this work, we have fabricated hybrid heterojunction solar cells with structure ITO/ZnO/P3HT:PCBM:CTSe NCs (optimized weight percentage 10 wt%)/MoO 3 /Ag (device SM10). A thin layer of molybdenum oxide MoO 3 prepared by peroxomolybdic acid organosol as the precursor was used as hole transport laye...

Full description

Saved in:
Bibliographic Details
Published in:Bulletin of materials science 2023-08, Vol.46 (3), p.163, Article 163
Main Authors: Dwivedi, Shailendra Kumar, Tiwari, D C, Kumar, Neeraj, Tripathi, Santosh K, Prasad, N Eswara
Format: Article
Language:English
Subjects:
Acids
Carrier mobility
Chemistry and Materials Science
Current carriers
Electrochemical impedance spectroscopy
Electron microscopes
Engineering
Heterojunctions
Materials Science
Metal oxides
Molybdenum oxides
Molybdenum trioxide
Morphology
Nanocrystals
Nyquist plots
Photovoltaic cells
Polymers
Radiation
Semiconductors
Solar cells
Solvents
Spectrum analysis
Thin films
Zinc oxide
Zinc oxides
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we have fabricated hybrid heterojunction solar cells with structure ITO/ZnO/P3HT:PCBM:CTSe NCs (optimized weight percentage 10 wt%)/MoO 3 /Ag (device SM10). A thin layer of molybdenum oxide MoO 3 prepared by peroxomolybdic acid organosol as the precursor was used as hole transport layers (HTLs). The performance of the device was compared with ITO/ZnO/P3HT:PCBM:CTSe NCs/Ag(device S10). The important parameters such as global charge carrier mobility (µ), effective charge carriers lifetime ( τ n ) and charge diffusion time ( τ d ) have been extracted from electrochemical impedance spectroscopy (EIS) performed at the bias of 0.1 V in the dark. The Nyquist plot obtained from EIS has demonstrated effective carriers lifetime, global mobility and charge diffusion time for a device SM10 as 6.46 ms, 12.6 × 10 −4 cm 2 V −1 S −1 and 5.2 µs and for device S10 as 5.65 ms, 9.58 × 10 −4 cm 2 V −1 S −1 and 6.8 µs, respectively.
ISSN:0973-7669
0250-4707
0973-7669
DOI:10.1007/s12034-023-03000-7