Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual Gate Tunnel FET (DH-GS-TM-DG-TFET) with effective surface charge. The model is derived by solving the 2-D Poisson equation...

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Bibliographic Details
Published in:SILICON 2021, Vol.13 (1), p.275-287
Main Authors: Venkatesh, M., Balamurugan, N. B.
Format: Article
Language:English
Subjects:
Approximation
Boundary conditions
Chemistry
Chemistry and Materials Science
Electric fields
Electrons
Engineering
Environmental Chemistry
Inorganic Chemistry
Interfaces
Lasers
Materials Science
Optical Devices
Optics
Original Paper
Photonics
Poisson equation
Polymer Sciences
Robustness (mathematics)
Silicon
Surface charge
Threshold voltage
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Summary:In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual Gate Tunnel FET (DH-GS-TM-DG-TFET) with effective surface charge. The model is derived by solving the 2-D Poisson equation in Silicon graded channel region using suitable boundary conditions. The proposed model incorporates the effects of various device parameters such as channel potential, electric field, DIBL, threshold voltage roll-off and drain current. Also, the fringing capacitance characteristics of the proposed DH-GS-TM-DG-TFET demonstrate superior performance over Triple material double gate and Single material double gate TFET structures. It is evident that the proposed device structure DH-GS-TM-DGTFET provides poor outflow current I OFF (10 −16 A/μm), and remarkable betterment in ON current (10 −6 A/μm). Moreover, the I ON /I OFF ratio is 10 10 . To validate the robustness of model, the numerical results are compared with those obtained using Sentaurus TCAD.
ISSN:1876-990X
1876-9918
DOI:10.1007/s12633-020-00422-4