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Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications
As an alternative to conventional tunnel field-effect transistor (TFET) devices for low-power applications, drain-underlap (DU) cylindrical (Cyl) gate-all-around (GAA) TFETs based on a Ge source using fringing-field effects can show suppressed subthreshold leakage current. In this work, such a fring...
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| Published in: | Journal of computational electronics 2018-12, Vol.17 (4), p.1650-1657 |
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| Main Authors: | , , , |
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| container_end_page | 1657 |
| container_issue | 4 |
| container_start_page | 1650 |
| container_title | Journal of computational electronics |
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| creator | Beohar, Ankur Yadav, Nandakishor Shah, Ambika Prasad Vishvakarma, Santosh Kumar |
| description | As an alternative to conventional tunnel field-effect transistor (TFET) devices for low-power applications, drain-underlap (DU) cylindrical (Cyl) gate-all-around (GAA) TFETs based on a Ge source using fringing-field effects can show suppressed subthreshold leakage current. In this work, such a fringing field is implemented using a hetero-spacer dielectric placed over the Ge source, resulting in enhanced direct-current (DC) and analog/radiofrequency (RF) characteristics such as
I
ON
,
I
OFF
, subthreshold swing (SS),
C
gs
,
C
gd
, and
f
t
. It is found that the ambipolar behavior and Miller capacitance
C
gd
are minimized in combination with a high band-to-band tunneling (BTBT) rate compared with devices based on a homo-spacer dielectric placed over a Si source. At the same time, the drain-underlap design increases the series resistance across the drain–channel junction overlapped by the fringing field, reducing
I
OFF
. Furthermore, the performance of the proposed device matches well with experimental data when including the effects of trap-assisted tunneling (TAT) for improved device reliability. Thus, the behavior of the RF figure of merit of the proposed device is different compared with conventional TFET designs. |
| doi_str_mv | 10.1007/s10825-018-1222-9 |
| format | article |
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I
ON
,
I
OFF
, subthreshold swing (SS),
C
gs
,
C
gd
, and
f
t
. It is found that the ambipolar behavior and Miller capacitance
C
gd
are minimized in combination with a high band-to-band tunneling (BTBT) rate compared with devices based on a homo-spacer dielectric placed over a Si source. At the same time, the drain-underlap design increases the series resistance across the drain–channel junction overlapped by the fringing field, reducing
I
OFF
. Furthermore, the performance of the proposed device matches well with experimental data when including the effects of trap-assisted tunneling (TAT) for improved device reliability. Thus, the behavior of the RF figure of merit of the proposed device is different compared with conventional TFET designs.</description><identifier>ISSN: 1569-8025</identifier><identifier>EISSN: 1572-8137</identifier><identifier>DOI: 10.1007/s10825-018-1222-9</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Electrical Engineering ; Engineering ; Field effect transistors ; Figure of merit ; Leakage current ; Mathematical and Computational Engineering ; Mathematical and Computational Physics ; Mechanical Engineering ; Nanowires ; Optical and Electronic Materials ; Power management ; Radio frequency ; Semiconductor devices ; Semiconductors ; Theoretical</subject><ispartof>Journal of computational electronics, 2018-12, Vol.17 (4), p.1650-1657</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2018.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-f96a0fe93570cb6fcc99957363f3ec83ddd5a37ebc2d52b345c63c38fbe3f7a43</citedby><cites>FETCH-LOGICAL-c316t-f96a0fe93570cb6fcc99957363f3ec83ddd5a37ebc2d52b345c63c38fbe3f7a43</cites><orcidid>0000-0002-0515-2711</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Beohar, Ankur</creatorcontrib><creatorcontrib>Yadav, Nandakishor</creatorcontrib><creatorcontrib>Shah, Ambika Prasad</creatorcontrib><creatorcontrib>Vishvakarma, Santosh Kumar</creatorcontrib><title>Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications</title><title>Journal of computational electronics</title><addtitle>J Comput Electron</addtitle><description>As an alternative to conventional tunnel field-effect transistor (TFET) devices for low-power applications, drain-underlap (DU) cylindrical (Cyl) gate-all-around (GAA) TFETs based on a Ge source using fringing-field effects can show suppressed subthreshold leakage current. In this work, such a fringing field is implemented using a hetero-spacer dielectric placed over the Ge source, resulting in enhanced direct-current (DC) and analog/radiofrequency (RF) characteristics such as
I
ON
,
I
OFF
, subthreshold swing (SS),
C
gs
,
C
gd
, and
f
t
. It is found that the ambipolar behavior and Miller capacitance
C
gd
are minimized in combination with a high band-to-band tunneling (BTBT) rate compared with devices based on a homo-spacer dielectric placed over a Si source. At the same time, the drain-underlap design increases the series resistance across the drain–channel junction overlapped by the fringing field, reducing
I
OFF
. Furthermore, the performance of the proposed device matches well with experimental data when including the effects of trap-assisted tunneling (TAT) for improved device reliability. Thus, the behavior of the RF figure of merit of the proposed device is different compared with conventional TFET designs.</description><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Field effect transistors</subject><subject>Figure of merit</subject><subject>Leakage current</subject><subject>Mathematical and Computational Engineering</subject><subject>Mathematical and Computational Physics</subject><subject>Mechanical Engineering</subject><subject>Nanowires</subject><subject>Optical and Electronic Materials</subject><subject>Power management</subject><subject>Radio frequency</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Theoretical</subject><issn>1569-8025</issn><issn>1572-8137</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KAzEQx4MoWKsP4C3gOTYf3Y8cl2qrUBCknkM2O6lb1s2a7FL6Bj62WVfwJDPMTMj8Z5IfQreM3jNKs0VgNOcJoSwnjHNO5BmasSTjJGciOx_rVJKc8uQSXYVwoJRTvmQz9FW0unH7xesam3fttenB16GvTcDOYo3FA1mdGjy0FfhGd3hTFGS3ftzhUgeosGtjzwZwcIM3gIdQt3tsfYzRia2hqTCMBwD_c-U8btyRdO4IHuuua2qj-9q14RpdWN0EuPnNc_QW16yeyPZl87wqtsQIlvbEylRTC1IkGTVlao2RUiaZSIUVYHJRVVWiRQal4VXCS7FMTCqMyG0JwmZ6Kebobprbefc5QOjVIb49QgiKS5bzTMhoc8SmLuNdCB6s6nz9of1JMapG4GoCriJwNQJXo4ZPmtCNfwX_N_l_0TdM9oQJ</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Beohar, Ankur</creator><creator>Yadav, Nandakishor</creator><creator>Shah, Ambika Prasad</creator><creator>Vishvakarma, Santosh Kumar</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><orcidid>https://orcid.org/0000-0002-0515-2711</orcidid></search><sort><creationdate>20181201</creationdate><title>Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications</title><author>Beohar, Ankur ; Yadav, Nandakishor ; Shah, Ambika Prasad ; Vishvakarma, Santosh Kumar</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-f96a0fe93570cb6fcc99957363f3ec83ddd5a37ebc2d52b345c63c38fbe3f7a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Field effect transistors</topic><topic>Figure of merit</topic><topic>Leakage current</topic><topic>Mathematical and Computational Engineering</topic><topic>Mathematical and Computational Physics</topic><topic>Mechanical Engineering</topic><topic>Nanowires</topic><topic>Optical and Electronic Materials</topic><topic>Power management</topic><topic>Radio frequency</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Theoretical</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Beohar, Ankur</creatorcontrib><creatorcontrib>Yadav, Nandakishor</creatorcontrib><creatorcontrib>Shah, Ambika Prasad</creatorcontrib><creatorcontrib>Vishvakarma, Santosh Kumar</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Databases</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest Engineering Database</collection><collection>ProQuest Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><jtitle>Journal of computational electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Beohar, Ankur</au><au>Yadav, Nandakishor</au><au>Shah, Ambika Prasad</au><au>Vishvakarma, Santosh Kumar</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications</atitle><jtitle>Journal of computational electronics</jtitle><stitle>J Comput Electron</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>17</volume><issue>4</issue><spage>1650</spage><epage>1657</epage><pages>1650-1657</pages><issn>1569-8025</issn><eissn>1572-8137</eissn><abstract>As an alternative to conventional tunnel field-effect transistor (TFET) devices for low-power applications, drain-underlap (DU) cylindrical (Cyl) gate-all-around (GAA) TFETs based on a Ge source using fringing-field effects can show suppressed subthreshold leakage current. In this work, such a fringing field is implemented using a hetero-spacer dielectric placed over the Ge source, resulting in enhanced direct-current (DC) and analog/radiofrequency (RF) characteristics such as
I
ON
,
I
OFF
, subthreshold swing (SS),
C
gs
,
C
gd
, and
f
t
. It is found that the ambipolar behavior and Miller capacitance
C
gd
are minimized in combination with a high band-to-band tunneling (BTBT) rate compared with devices based on a homo-spacer dielectric placed over a Si source. At the same time, the drain-underlap design increases the series resistance across the drain–channel junction overlapped by the fringing field, reducing
I
OFF
. Furthermore, the performance of the proposed device matches well with experimental data when including the effects of trap-assisted tunneling (TAT) for improved device reliability. Thus, the behavior of the RF figure of merit of the proposed device is different compared with conventional TFET designs.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10825-018-1222-9</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-0515-2711</orcidid></addata></record> |
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| subjects | Electrical Engineering Engineering Field effect transistors Figure of merit Leakage current Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Nanowires Optical and Electronic Materials Power management Radio frequency Semiconductor devices Semiconductors Theoretical |
| title | Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications |
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