Analog/RF characteristics of a 3D-Cyl underlap GAA-TFET based on a Ge source using fringing-field engineering for low-power applications

As an alternative to conventional tunnel field-effect transistor (TFET) devices for low-power applications, drain-underlap (DU) cylindrical (Cyl) gate-all-around (GAA) TFETs based on a Ge source using fringing-field effects can show suppressed subthreshold leakage current. In this work, such a fring...

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Bibliographic Details
Published in:Journal of computational electronics 2018-12, Vol.17 (4), p.1650-1657
Main Authors: Beohar, Ankur, Yadav, Nandakishor, Shah, Ambika Prasad, Vishvakarma, Santosh Kumar
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
Field effect transistors
Figure of merit
Leakage current
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Nanowires
Optical and Electronic Materials
Power management
Radio frequency
Semiconductor devices
Semiconductors
Theoretical
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Summary:As an alternative to conventional tunnel field-effect transistor (TFET) devices for low-power applications, drain-underlap (DU) cylindrical (Cyl) gate-all-around (GAA) TFETs based on a Ge source using fringing-field effects can show suppressed subthreshold leakage current. In this work, such a fringing field is implemented using a hetero-spacer dielectric placed over the Ge source, resulting in enhanced direct-current (DC) and analog/radiofrequency (RF) characteristics such as I ON , I OFF , subthreshold swing (SS), C gs , C gd , and f t . It is found that the ambipolar behavior and Miller capacitance C gd are minimized in combination with a high band-to-band tunneling (BTBT) rate compared with devices based on a homo-spacer dielectric placed over a Si source. At the same time, the drain-underlap design increases the series resistance across the drain–channel junction overlapped by the fringing field, reducing I OFF . Furthermore, the performance of the proposed device matches well with experimental data when including the effects of trap-assisted tunneling (TAT) for improved device reliability. Thus, the behavior of the RF figure of merit of the proposed device is different compared with conventional TFET designs.
ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-018-1222-9