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K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique
A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band. Differentially modulated current sources, which reduce flicker noise...
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Published in: | Microwave and optical technology letters 2024-01, Vol.66 (1), p.n/a |
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description | A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band. Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively. |
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Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. 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Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. 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subjects | Capacitor banks CMOS Current sources Electric potential Figure of merit K‐band Phase noise Power consumption switched self‐biasing Tuning Voltage Voltage controlled oscillators voltage‐controlled oscillator |
title | K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique |
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