Loading…

K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique

A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise...

Full description

Saved in:
Bibliographic Details
Published in:Microwave and optical technology letters 2024-01, Vol.66 (1), p.n/a
Main Authors: Son, Hyeon Jin, Shin, Dong‐Jun, Choi, Ui‐Gyu, Yang, Jong‐Ryul
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-LOGICAL-c2579-b25c47386fb15071b9d67352febabfd597c4c831080437cb9d84114db06e1eaf3
container_end_page n/a
container_issue 1
container_start_page
container_title Microwave and optical technology letters
container_volume 66
creator Son, Hyeon Jin
Shin, Dong‐Jun
Choi, Ui‐Gyu
Yang, Jong‐Ryul
description A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively.
doi_str_mv 10.1002/mop.33979
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2917457722</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2917457722</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2579-b25c47386fb15071b9d67352febabfd597c4c831080437cb9d84114db06e1eaf3</originalsourceid><addsrcrecordid>eNp1kE1OwzAQhS0EEqGw4AaRWLFI6984XqKKP9GqSNC15ThOm8qNi51SdccROCMnwW3Yshrpve_NaB4A1wgOEYR4tHabISGCixOQICiKDPMcnoIEFoJlmHJ-Di5CWEEICec4AfOXn6_vUrVVOp7O3tJPZzu1MFHTru28s9ZUqQu6sVZ1zqfb0LSLNOyaTi-jE4ytD_lGHfXO6GXbfGzNJTirlQ3m6m8OwPzh_n38lE1mj8_ju0mmMeMiKzHTlJMir0vEIEelqHJOGK5Nqcq6YoJrqguCYAEp4TraBUWIViXMDTKqJgNw0-_deBfPhk6u3Na38aTEAnHK4o84Urc9pb0LwZtabnyzVn4vEZSH1mRsTR5bi-yoZ3eNNfv_QTmdvfaJX3Loccc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2917457722</pqid></control><display><type>article</type><title>K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique</title><source>Wiley-Blackwell Journals</source><creator>Son, Hyeon Jin ; Shin, Dong‐Jun ; Choi, Ui‐Gyu ; Yang, Jong‐Ryul</creator><creatorcontrib>Son, Hyeon Jin ; Shin, Dong‐Jun ; Choi, Ui‐Gyu ; Yang, Jong‐Ryul</creatorcontrib><description>A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively.</description><identifier>ISSN: 0895-2477</identifier><identifier>EISSN: 1098-2760</identifier><identifier>DOI: 10.1002/mop.33979</identifier><language>eng</language><publisher>New York: Wiley Subscription Services, Inc</publisher><subject>Capacitor banks ; CMOS ; Current sources ; Electric potential ; Figure of merit ; K‐band ; Phase noise ; Power consumption ; switched self‐biasing ; Tuning ; Voltage ; Voltage controlled oscillators ; voltage‐controlled oscillator</subject><ispartof>Microwave and optical technology letters, 2024-01, Vol.66 (1), p.n/a</ispartof><rights>2023 Wiley Periodicals LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2579-b25c47386fb15071b9d67352febabfd597c4c831080437cb9d84114db06e1eaf3</cites><orcidid>0000-0001-8673-2234 ; 0000-0003-4939-3274 ; 0000-0002-4316-9282 ; 0000-0001-8797-7663</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fmop.33979$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fmop.33979$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,786,790,27957,27958,50923,51032</link.rule.ids></links><search><creatorcontrib>Son, Hyeon Jin</creatorcontrib><creatorcontrib>Shin, Dong‐Jun</creatorcontrib><creatorcontrib>Choi, Ui‐Gyu</creatorcontrib><creatorcontrib>Yang, Jong‐Ryul</creatorcontrib><title>K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique</title><title>Microwave and optical technology letters</title><description>A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively.</description><subject>Capacitor banks</subject><subject>CMOS</subject><subject>Current sources</subject><subject>Electric potential</subject><subject>Figure of merit</subject><subject>K‐band</subject><subject>Phase noise</subject><subject>Power consumption</subject><subject>switched self‐biasing</subject><subject>Tuning</subject><subject>Voltage</subject><subject>Voltage controlled oscillators</subject><subject>voltage‐controlled oscillator</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kE1OwzAQhS0EEqGw4AaRWLFI6984XqKKP9GqSNC15ThOm8qNi51SdccROCMnwW3Yshrpve_NaB4A1wgOEYR4tHabISGCixOQICiKDPMcnoIEFoJlmHJ-Di5CWEEICec4AfOXn6_vUrVVOp7O3tJPZzu1MFHTru28s9ZUqQu6sVZ1zqfb0LSLNOyaTi-jE4ytD_lGHfXO6GXbfGzNJTirlQ3m6m8OwPzh_n38lE1mj8_ju0mmMeMiKzHTlJMir0vEIEelqHJOGK5Nqcq6YoJrqguCYAEp4TraBUWIViXMDTKqJgNw0-_deBfPhk6u3Na38aTEAnHK4o84Urc9pb0LwZtabnyzVn4vEZSH1mRsTR5bi-yoZ3eNNfv_QTmdvfaJX3Loccc</recordid><startdate>202401</startdate><enddate>202401</enddate><creator>Son, Hyeon Jin</creator><creator>Shin, Dong‐Jun</creator><creator>Choi, Ui‐Gyu</creator><creator>Yang, Jong‐Ryul</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-8673-2234</orcidid><orcidid>https://orcid.org/0000-0003-4939-3274</orcidid><orcidid>https://orcid.org/0000-0002-4316-9282</orcidid><orcidid>https://orcid.org/0000-0001-8797-7663</orcidid></search><sort><creationdate>202401</creationdate><title>K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique</title><author>Son, Hyeon Jin ; Shin, Dong‐Jun ; Choi, Ui‐Gyu ; Yang, Jong‐Ryul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2579-b25c47386fb15071b9d67352febabfd597c4c831080437cb9d84114db06e1eaf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Capacitor banks</topic><topic>CMOS</topic><topic>Current sources</topic><topic>Electric potential</topic><topic>Figure of merit</topic><topic>K‐band</topic><topic>Phase noise</topic><topic>Power consumption</topic><topic>switched self‐biasing</topic><topic>Tuning</topic><topic>Voltage</topic><topic>Voltage controlled oscillators</topic><topic>voltage‐controlled oscillator</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Son, Hyeon Jin</creatorcontrib><creatorcontrib>Shin, Dong‐Jun</creatorcontrib><creatorcontrib>Choi, Ui‐Gyu</creatorcontrib><creatorcontrib>Yang, Jong‐Ryul</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Son, Hyeon Jin</au><au>Shin, Dong‐Jun</au><au>Choi, Ui‐Gyu</au><au>Yang, Jong‐Ryul</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique</atitle><jtitle>Microwave and optical technology letters</jtitle><date>2024-01</date><risdate>2024</risdate><volume>66</volume><issue>1</issue><epage>n/a</epage><issn>0895-2477</issn><eissn>1098-2760</eissn><abstract>A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively.</abstract><cop>New York</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/mop.33979</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8673-2234</orcidid><orcidid>https://orcid.org/0000-0003-4939-3274</orcidid><orcidid>https://orcid.org/0000-0002-4316-9282</orcidid><orcidid>https://orcid.org/0000-0001-8797-7663</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0895-2477
ispartof Microwave and optical technology letters, 2024-01, Vol.66 (1), p.n/a
issn 0895-2477
1098-2760
language eng
recordid cdi_proquest_journals_2917457722
source Wiley-Blackwell Journals
subjects Capacitor banks
CMOS
Current sources
Electric potential
Figure of merit
K‐band
Phase noise
Power consumption
switched self‐biasing
Tuning
Voltage
Voltage controlled oscillators
voltage‐controlled oscillator
title K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-21T15%3A38%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=K%E2%80%90band%20CMOS%20voltage%E2%80%90controlled%20oscillator%20using%20switched%20self%E2%80%90biasing%20technique&rft.jtitle=Microwave%20and%20optical%20technology%20letters&rft.au=Son,%20Hyeon%20Jin&rft.date=2024-01&rft.volume=66&rft.issue=1&rft.epage=n/a&rft.issn=0895-2477&rft.eissn=1098-2760&rft_id=info:doi/10.1002/mop.33979&rft_dat=%3Cproquest_cross%3E2917457722%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2579-b25c47386fb15071b9d67352febabfd597c4c831080437cb9d84114db06e1eaf3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2917457722&rft_id=info:pmid/&rfr_iscdi=true