K‐band CMOS voltage‐controlled oscillator using switched self‐biasing technique

A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise...

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Bibliographic Details
Published in:Microwave and optical technology letters 2024-01, Vol.66 (1), p.n/a
Main Authors: Son, Hyeon Jin, Shin, Dong‐Jun, Choi, Ui‐Gyu, Yang, Jong‐Ryul
Format: Article
Language:English
Subjects:
Capacitor banks
CMOS
Current sources
Electric potential
Figure of merit
K‐band
Phase noise
Power consumption
switched self‐biasing
Tuning
Voltage
Voltage controlled oscillators
voltage‐controlled oscillator
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Summary:A complementary metal oxide semiconductor (CMOS) voltage‐controlled oscillator (VCO) using a tail current source modulated with the output frequency is presented to achieve low phase noise with low power consumption at the K‐band.  Differentially modulated current sources, which reduce flicker noise by the feedback of the VCO outputs, contribute to an overall reduction in the phase noise of the VCO using the electromagnetic‐based fully symmetrical design. The proposed LC VCO with a 3‐bit switched capacitor bank for a wide tuning range was fabricated on the size of 0.4 × 0.57 mm2 using a 65‐nm CMOS process. The measurement results of the proposed VCO showed a frequency tuning range from 22.57 to 25.3 GHz, and a phase noise of −108.48 dBc/Hz at a 1‐MHz offset frequency with a power consumption of 8.27 mW at a supply voltage of 1.2 V. The calculated figure of merit (FoM) and FoM with the tuning range were −186.48 and −187.67 dBc/Hz, respectively.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.33979