Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra‐thin MoOx hole collector layer via tailoring (i)a‐Si:H/MoOx interface

Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short‐circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain a...

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Bibliographic Details
Published in:Progress in photovoltaics 2023-12, Vol.31 (12), p.1245-1254
Main Authors: Cao, Liqi, Procel, Paul, Alcañiz, Alba, Jin, Yan, Tichelaar, Frans, Özkol, Engin, Zhao, Yifeng, Han, Can, Yang, Guangtao, Yao, Zhirong, Zeman, Miro, Santbergen, Rudi, Mazzarella, Luana, Olindo Isabella
Format: Article
Language:English
Subjects:
Amorphous silicon
Circuits
Current density
Diffusion barriers
Dipoles
Electrical properties
Energy conversion efficiency
Heterojunctions
Molybdenum oxides
Optimization
Oxygen
Oxygen content
Photovoltaic cells
Solar cells
Thin films
Transition metal oxides
Work functions
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Summary:Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short‐circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoOx layer quality is the interface between the MoOx and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoOx by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoOx hole collector. With this approach, we can thin down the MoOx thickness to 1.7 nm and demonstrate short‐circuit current density well above 40 mA/cm2 and a champion device exhibiting 23.83% conversion efficiency.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.3638