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Demonstration of T2SLs InAs/InAsSb Based Interband Cascade Detector Supported by Immersion Lens for LWIR
This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by immersion lenses. The device is based on the “Ga-free” InAs/InAsSb type-II superlattice with highly doped p + /n + superlattice tunneling junctions conn...
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Published in: | Journal of electronic materials 2023-11, Vol.52 (11), p.7068-7073 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper presents the performance of an interband cascade long-wavelength infrared detector designed for high operating temperatures supported by immersion lenses. The device is based on the “Ga-free” InAs/InAsSb type-II superlattice with highly doped p
+
/n
+
superlattice tunneling junctions connecting adjacent stages. Detectivity of the multi-junction heterostructure detector exceeding 10
10
cm Hz
1/2
/W was estimated at wavelength
λ
~ 9 µm and
T
= 210 K and ~ 3 × 10
8
cm Hz
1/2
/W for
T
= 300 K, achieving a tenfold improvement in detectivity in comparison to a device without an immersion lens and 30-fold improvement in detectivity in comparison to the single-stage device. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-023-10665-7 |