A Study on the Process of Plasma-Enhanced Chemical Vapor Deposition of (AlxGa1 –x)2O3 Thin Films

A process for fabricating Al-doped β-Ga 2 O 3 thin films of the (Al x Ga 1− x ) 2 O 3 composition by plasma-enhanced chemical vapor deposition has been studied for the first time. High-purity gallium metal, aluminum iodide (AlI 3 ), and high-purity oxygen were used as precursors. Low-temperature pla...

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Bibliographic Details
Published in:High energy chemistry 2023-10, Vol.57 (5), p.430-435
Main Authors: Mochalov, L. A., Kudryashov, M. A., Prokhorov, I. O., Vshivtsev, M. A., Kudryashova, Yu. P., Knyazev, A. V.
Format: Article
Language:English
Subjects:
Aluminum oxide
Chemical composition
Chemistry
Chemistry and Materials Science
Emission analysis
Gallium oxides
Low temperature
Optical emission spectroscopy
Physical Chemistry
Plasma Chemistry
Plasma enhanced chemical vapor deposition
Purity
Thin films
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Summary:A process for fabricating Al-doped β-Ga 2 O 3 thin films of the (Al x Ga 1− x ) 2 O 3 composition by plasma-enhanced chemical vapor deposition has been studied for the first time. High-purity gallium metal, aluminum iodide (AlI 3 ), and high-purity oxygen were used as precursors. Low-temperature plasma at a reduced pressure (0.01 torr) was the initiator of chemical transformations between the reactants. The plasma-enhanced deposition process was studied by optical emission spectroscopy in the range of 180–1100 nm. The obtained thin films of the (Al x Ga 1− x ) 2 O 3 system with the amount of the Al 2 O 3 phase up to 20% were studied by various analytical methods.
ISSN:0018-1439
1608-3148
DOI:10.1134/S0018143923050065