Impact of graphene state on the orientation of III–nitride

We attempted to grow (10–13) semi-polar GaN on graphene to confirm the possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was obtained on an optimized template using optimized growth conditions. However, (10–13), (0002), and other GaN orientations were found under the...

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Bibliographic Details
Published in:Applied physics letters 2023-09, Vol.123 (12)
Main Authors: Park, Jeong-Hwan, Hu, Nan, Park, Mun-Do, Wang, Jia, Yang, Xu, Lee, Dong-Seon, Amano, Hiroshi, Pristovsek, Markus
Format: Article
Language:English
Subjects:
Applied physics
Epitaxy
Gallium nitrides
Graphene
Raman spectroscopy
Scanning electron microscopy
Scanning transmission electron microscopy
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Summary:We attempted to grow (10–13) semi-polar GaN on graphene to confirm the possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was obtained on an optimized template using optimized growth conditions. However, (10–13), (0002), and other GaN orientations were found under the same growth conditions on a graphene-coated template. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy revealed that multi-domain GaN and (0002) GaN occurred in areas with a damaged graphene interfacial layer and intact graphene, respectively. Raman spectroscopy confirmed that graphene could survive under the growth conditions used here. Using cross-sectional scanning electron microscopy, we propose a simple approach to distinguish damaged graphene. Although the remote epitaxy of semi-polar GaN has not been demonstrated despite the usage of an optimized template and growth conditions, our results confirm the importance of the interfacial state in determining the crystallinity of the overgrown layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0157588