Investigation of the Fano Resonance in the Cross Section of a Semiconductor Structure with a p–n Junction Formed in a Porous Silicon Film

The features of the distribution of the Fano resonance parameters in the internal regions of a semiconductor structure containing a p – n junction inside a porous silicon film are studied. The porous silicon film is formed by metal-assisted etching. The Fano resonance was studied by Raman spectrosco...

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Bibliographic Details
Published in:Bulletin of the Lebedev Physics Institute 2023-07, Vol.50 (7), p.290-293
Main Authors: Melnik, N. N., Tregulov, V. V., Skoptsova, G. N., Ivanov, A. I., Kostsov, D. S.
Format: Article
Language:English
Subjects:
Fano resonance
P-n junctions
Physics
Physics and Astronomy
Porous silicon
Raman spectroscopy
Silicon films
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Summary:The features of the distribution of the Fano resonance parameters in the internal regions of a semiconductor structure containing a p – n junction inside a porous silicon film are studied. The porous silicon film is formed by metal-assisted etching. The Fano resonance was studied by Raman spectroscopy. It is shown that the Fano resonance is most pronounced in the near-surface por-Si layer.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335623070096