Vertically Extended Channel Architecture for Implementing a Photolithographically Scalable Thin-Film Transistor

We present a prototype of photolithographically patternable thin-film transistor (TFT) architecture using vertically extended channel (VEC) for ultrahigh-resolution (UHR) display applications such as augmented reality and virtual reality (AR/VR) devices. Implementing UHR displays requires a unit pix...

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Bibliographic Details
Published in:IEEE electron device letters 2023-08, Vol.44 (8), p.1-1
Main Authors: Lee, Sein, Sung, Taehoon, Jung, Se-Yeon, Song, Young-Woong, Song, Min-Kyu, Ham, Wooho, Park, Jeong-Min, Yoon, Jeong Hyun, Kwon, Jang-Yeon
Format: Article
Language:English
Subjects:
Augmented reality
Electrodes
Fabrication
Insulators
Logic gates
Micrometers
Photolithography
Planar structures
Scalable device
Semiconductor devices
Thickness
Thin film transistors
thin-film transistor footprints
Transistors
ultrahigh-resolution display
vertically extended channel
Virtual reality
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Summary:We present a prototype of photolithographically patternable thin-film transistor (TFT) architecture using vertically extended channel (VEC) for ultrahigh-resolution (UHR) display applications such as augmented reality and virtual reality (AR/VR) devices. Implementing UHR displays requires a unit pixel size of a few micrometers in pitch, so TFT footprints should be smaller than those of conventional planar structures, while retaining the appropriate on-current level and mobility. The proposed device has a small footprint of 4.5 F 2 compared to other TFT structures and can achieve higher mobility and on-current by increasing VEC thickness without changing any device channel feature size and footprint. The presented VEC TFT showed high saturation mobility of 22.4 cm 2 /V∙s and a linear increase in output characteristics as a function of VEC thickness variation. Furthermore, we demonstrated the back-end-of-line (BEOL) competitiveness of this device structure through the electrical parameter comparison among the planar TFT device structures, which were fabricated with a similar channel dimension.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3286100