Linewidth enhancement factor of type-II red InGaN/GaNSb/GaN quantum-well lasers

Abstract We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost indep...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-07, Vol.62 (7), p.72003
Main Authors: Park, Seoung-Hwan, Shim, Jong-In, Shin, Dong-Soo
Format: Article
Language:English
Subjects:
GaN
GaNSb
Indium gallium nitrides
linewidth enhancement factor
optical gain
Quantum well lasers
refractive index
type-II quantum wells
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Summary:Abstract We investigate the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN quantum-well (QW) laser, employing a non-Markovian gain model with many-body effects included. It is shown that the linewidth enhancement factor of the type-II red InGaN/GaNSb/GaN QW structure is almost independent of the peak-gain coefficient. This behavior is contrasted with that of the conventional type-I InGaN/GaN QW structure, whose linewidth enhancement factor increases as the peak-gain coefficient increases. These results can be explained by the peak-gain dependencies of the differential refractive-index change and the differential gain. Moreover, the type-II red InGaN/GaNSb/GaN QW laser yields much smaller values of the linewidth enhancement factor than the conventional type-I InGaN/GaN QW laser. The type-II red InGaN/GaNSb/GaN QW laser with a relatively small, excitation-independent linewidth enhancement factor is expected to be highly useful for many practical applications.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ace39a