Tailoring electrical characteristics of Si-nanowires and etched Si by MACE temperature variation

Optoelectronic applications prefer Si nanostructures over bulk-Si due to improved optical and electrical properties. However, tuning the electrical properties of Si nanostructures is a bottleneck for a broad range of applications. Metal-assisted chemical etching (MACE) is a cost-effective method to...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2023-06, Vol.34 (16), p.1275, Article 1275
Main Authors: Sahoo, Mihir Kumar, Muduli, Sakti Prasanna, Kale, Paresh
Format: Article
Language:English
Subjects:
Bias
Characterization and Evaluation of Materials
Chemical etching
Chemistry and Materials Science
Diameters
Dimensional changes
Diodes
Electrical properties
Electrolytes
Energy gap
Equivalent circuits
Etching
Materials Science
Nanostructure
Nanowires
Optical and Electronic Materials
Optical properties
Optoelectronics
Silicon
Silicon substrates
Temperature
Thickness
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Summary:Optoelectronic applications prefer Si nanostructures over bulk-Si due to improved optical and electrical properties. However, tuning the electrical properties of Si nanostructures is a bottleneck for a broad range of applications. Metal-assisted chemical etching (MACE) is a cost-effective method to fabricate silicon nanowires (SiNWs) array and etched silicon (eSi) using bulk-Si and porous substrates, respectively. Among various fabrication parameters, MACE temperature is appropriate to tailor the nanostructure dimensions- length and diameter of SiNWs and thickness of the porous layer of eSi, on which the bandgap and the electrical biasing characteristic depend. The study addresses the dimensional change of nanostructures as the impact of MACE temperature variation on the bandgap and the DC bias characteristics. Increasing MACE temperature reduces the nanowire diameter and the porous layer thickness. As a result, the bandgap widening and the lowering of the DC bias current are characterized by the series diode-resistance equivalent circuits.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-023-10709-y