Vertical‐type 3D/Quasi‐2D n‐p Heterojunction Perovskite Photodetector

This research demonstrates a state‐of‐the‐art vertical‐transport photodetector with an n‐type 3D MAPbI3/p‐type quasi‐2D (Q‐2D) BA2MA2Pb3I10 perovskite heterojunction. This structure introduces a ≈0.6 V built‐in electric field at the n‐p junction that greatly improves the characteristics of the perov...

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Bibliographic Details
Published in:Advanced functional materials 2023-05, Vol.33 (21), p.n/a
Main Authors: Hsiao, Yuan‐Wen, Cheng, Bi Shane, Hsu, Hung‐Chieh, Wu, Shih‐Hsiung, Wu, Hsuan‐Ta, Leu, Ching‐Chich, Shih, Chuan‐Feng
Format: Article
Language:English
Subjects:
3D MAPbI 3
Blade coating
Carrier lifetime
Dark current
Electric fields
Heterojunctions
Materials science
n‐p heterojunctions
Perovskites
Photometers
Planes
Quantum efficiency
Q‐2D BA 2MA 2Pb 3I 10 perovskites
Two dimensional materials
vertical‐type photodetectors
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Summary:This research demonstrates a state‐of‐the‐art vertical‐transport photodetector with an n‐type 3D MAPbI3/p‐type quasi‐2D (Q‐2D) BA2MA2Pb3I10 perovskite heterojunction. This structure introduces a ≈0.6 V built‐in electric field at the n‐p junction that greatly improves the characteristics of the perovskite photodetector, and the presence of Q‐2D perovskite on the surface improves the life. The electrical polarities of the 3D and the Q‐2D perovskite layers are simply controlled by self‐constituent doping, making clearly defined n‐p characteristics. Doctor‐blade coating is used to fabricate the photodetector with a large area. The Q‐2D materials with highly oriented (040) Q‐2D (n = 2,3) planes are near the surface, and the (111) preferred planes mixed with high index Q‐2D materials (n = 4,5) are found near the 3D/Q‐2D interface. The stacking and interface are beneficial for carrier extraction and transport, yielding an external quantum efficiency of 77.9%, a carrier lifetime long as 295.7 ns, and a responsibility of 0.41 A W−1. A low dark current density of 6.2 × 10−7 mA cm−2 and a high detectivity of 2.82 × 1013 Jones are obtained. Rise time and fall time are fast as 1.33 and 10.1 µs, respectively. The results show the application potential of 3D/Q‐2D n‐p junction perovskite photodetectors. A vertical heterojunction perovskite photodiode is demonstrated with an optimized combination of conduction types and dimensionalities of perovskites that is promising for development and practical application of stable and high‐performance photodetector. This structure introduces a built‐in electric field at the n‐p junction that greatly improves the characteristics of the perovskite photodetector, and the presence of Q‐2D perovskite on the surface much improves life.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202300169