Observation of the Fano Resonance in a Semiconductor Structure with a p–n Junction Formed in a Porous Silicon Film

The observation of a Fano resonance by Raman spectroscopy in a semiconductor structure with a p – n junction formed by thermal diffusion of boron in a porous silicon film is reported. The porous film is grown by metal-assisted etching on a single-crystal n -type silicon substrate.

Bibliographic Details

Published in:	Bulletin of the Lebedev Physics Institute 2023-02, Vol.50 (2), p.52-54
Main Authors:	Melnik, N. N., Tregulov, V. V., Skoptsova, G. N., Ivanov, A. I., Kostsov, D. S.
Format:	Article
Language:	English
Subjects:	Fano resonance P-n junctions Physics Physics and Astronomy Porous silicon Raman spectroscopy Silicon films Silicon substrates Single crystals Thermal diffusion
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