Impact of Pocket Layer on Linearity and Analog/RF Performance of InAs-GaSb Vertical Tunnel Field-Effect Transistor

In this study, the analog and radio frequency (RF) functionality of an indium arsenide-gallium antimonide (InAs-GaSb) tunnel field-effect transistor (TFET) with an InAs pocket layer is examined. The potential advantages and disadvantages of TFETs in comparison to their traditional counterparts are t...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electronic materials 2023-04, Vol.52 (4), p.2772-2779
Main Authors: Saravanan, M., Parthasarathy, Eswaran
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Field effect transistors
Gallium antimonide
Gallium antimonides
Indium arsenides
Instrumentation
Materials Science
Optical and Electronic Materials
Original Research Article
Radio frequency
Semiconductor devices
Solid State Physics
Transconductance
Transistors
Tunnels
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, the analog and radio frequency (RF) functionality of an indium arsenide-gallium antimonide (InAs-GaSb) tunnel field-effect transistor (TFET) with an InAs pocket layer is examined. The potential advantages and disadvantages of TFETs in comparison to their traditional counterparts are thoroughly analyzed. The conductivity of the channel is modulated by an InAs pocket layer. The InAs-GaSb vertical TFET (VTFET) with an InAs pocket layer (device B) yields higher ON-current (6.39 × 10 −6 A/μm) compared to the InAs-GaSb VTFET (device A) (5.18 × 10 −8 A/μm). Additionally, device B offers low OFF-current (2.26 × 10 −17 A/μm) compared with device A (1.14 × 10 −16 A/μm). The channel resistance values are 2 × 10 −5 Ω·cm for device B and 5 × 10 −3 Ω·cm for device A. The transconductance ( g m ) values for device B and device-A are 0.78 mS/μm and 0.37 mS/μm, respectively. Device B has a cutoff frequency ( f T ) of 37 GHz whereas that for device A is only 22 GHz at V GS  = 0.6 V. Compared to standard TFETs, the f T of the proposed design is 15 GHz higher owing to increased transconductance. The ON-state loss can be reduced by lowering the channel resistance. The InAs pocket layer in InAs-GaSb VTFETs makes them ideal candidates for low-power RF and analog applications.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-023-10239-7