HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION

Thin films of amorphous nonstoichiometric silicon oxide ( a -SiO :H, where  ) are synthesized via gas-jet electron beam plasma chemical vapor deposition. The stoichiometric coefficient of the a -SiO :H films is varied within a range of 0.47–1.63 as a function of  , determined by the flow rate of the...

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Bibliographic Details
Published in:Journal of applied mechanics and technical physics 2022-11, Vol.63 (5), p.757-764
Main Authors: Baranov, E. A., Zamchiy, A. O., Lunev, N. A., Merkulova, I. E., Volodin, V. A., Sharafutdinov, M. R., Shapovalova, A. A.
Format: Article
Language:English
Subjects:
Annealing
Applications of Mathematics
Chemical vapor deposition
Classical and Continuum Physics
Classical Mechanics
Degree of crystallinity
Electron beams
Flow velocity
Fluid- and Aerodynamics
Gas jets
High temperature
Mathematical Modeling and Industrial Mathematics
Mechanical Engineering
Nanoparticles
Physics
Physics and Astronomy
Raman spectra
Silicon oxides
Thin films
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Summary:Thin films of amorphous nonstoichiometric silicon oxide ( a -SiO :H, where  ) are synthesized via gas-jet electron beam plasma chemical vapor deposition. The stoichiometric coefficient of the a -SiO :H films is varied within a range of 0.47–1.63 as a function of  , determined by the flow rate of the Ar–SiH 4 mixture. High-temperature annealing (at 950°C for 2 h) of a -SiO :H thin films causes the formation of crystalline silicon nanoparticles with a size of 8.3–12.3 nm. It is shown that, with an increase in  , the degree of crystallinity of annealed films becomes higher by up to 66%. It is assumed that the position of a nanocrystalline silicon peak in the Raman spectra is affected by mechanical stresses. The quantitative estimation of such a stress yields 1.0–1.7 GPa.
ISSN:0021-8944
1573-8620
DOI:10.1134/S0021894422050030