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Structural and morphological studies of optically active spinel structured nanocrystalline ZnAl2O4 synthesized by modified auto-ignition combustion method

Nano-crystalline ZnAl 2 O 4 is successfully synthesized by modified auto-ignition combustion method. The X-Ray Diffraction analysis revealed that ZnAl 2 O 4 possessed Cubic structure with Fd-3m Space group. The crystallite size calculated using Debye–Scherrer formula is 15 nm and found to be phase p...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2023, Vol.34 (3), p.178, Article 178
Main Authors: John, Manju S., John, Fergy
Format: Article
Language:English
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Summary:Nano-crystalline ZnAl 2 O 4 is successfully synthesized by modified auto-ignition combustion method. The X-Ray Diffraction analysis revealed that ZnAl 2 O 4 possessed Cubic structure with Fd-3m Space group. The crystallite size calculated using Debye–Scherrer formula is 15 nm and found to be phase pure and crystalline in nature. The particle size confirmation is done using Hall–Williamson plot and Modified Scherrer equation. The refinement of the XRD pattern of the sample is done and the obtained parameters are a  =  b  =  c  = 8.0976 Å. The Fourier Transform Infrared spectrum of the as-prepared sample indicates the formation of spinel zinc aluminate without the presence of any traces of impurities. The Morphological properties of the prepared sample analyzed using HR-TEM and the particle size is obtained as 19 nm. The studies of XRD and TEM confirmed the nanocrystalline nature of the sample. The FE-SEM image of the sample exhibited a three-dimensional network like structure and the EDAX verified the elemental composition of the sample. The UV–Vis absorption and reflectance spectra of the as-prepared sample is studied in detail. The bandgap energy estimated from Tauc’s plot is 4.98 eV and found to be a wide bandgap material. Owing to the heavy optical absorption and Photoluminescence in the green and yellow region, the developed nanomaterial can be useful for various domains of opto-electronic systems.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-022-09397-x