High Performance of InGaZnO TFTs Using HfxAlyOz Nanolaminates as Gate Insulators Prepared by ALD

In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO2-based TFTs, the HfxAlyOz-based IGZO TFTs showed a larger fiel...

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Bibliographic Details
Published in:Coatings (Basel) 2022-12, Vol.12 (12), p.1811
Main Authors: Huang, Chuanxin, Liu, Yunyun, Ma, Dianguo, Guo, Zhongkai, Yao, Haiyun, Lv, Kaikai, Tian, Zhongjun, Liang, Lanju, Gao, Ju, Ding, Xingwei
Format: Article
Language:English
Subjects:
Aluminum oxide
Atomic layer epitaxy
Dielectric properties
Flat panel displays
Grain boundaries
Hafnium oxide
Indium gallium zinc oxide
Insulators
Semiconductor devices
Silicon dioxide
Silicon wafers
Thin film transistors
Thin films
Threshold voltage
Zinc oxides
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Summary:In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with single-layer HfO2-based TFTs, the HfxAlyOz-based IGZO TFTs showed a larger field-effect mobility of 10.31 cm2/Vs and a smaller subthreshold swing of 0.12 V/decade. Moreover, it showed a smaller threshold voltage shift of 0.5 V than that of HfO2-based TFTs under gate-bias stress at +5 V for 900 s due to the smooth surface. Moreover, the high dielectric HfxAlyOz nanolaminate had a larger equivalent SiO2 thinness than that of Al2O3 gate insulators, which are beneficial in applications of high-resolution display. Thus, the high mobility and high stability TFTs could be regarded as good candidates for active-matrix flat panel displays.
ISSN:2079-6412
2079-6412
DOI:10.3390/coatings12121811