Antimony Selenide Thin Films by Electrodeposition: Influence of Deposition Conditions and Post‐Deposition Thermal Treatment on Physical and Photoelectrochemical Properties

Herein, Sb2Se3 thin films are obtained by the electrodeposition technique from a single bath on fluorine‐doped tin oxide (FTO) substrates. The electrodeposition conditions such as precursor concentration and applied potential, as well as the annealing temperature, and its influence on the structural...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2022-11, Vol.219 (21), p.n/a
Main Authors: Avilez García, Rocio Guadalupe, Cerdán-Pasarán, Andrea, Madrigal, Arturo Fernández, Mathews, Nini Rose
Format: Article
Language:English
Subjects:
Annealing
Antimony compounds
Calomel electrode
Diffusion rate
Electrodeposition
Fluorine
Heat treatment
Nucleation
Optical properties
Photoelectrochemical devices
photoelectrochemical measurements
Photosensitivity
Precursors
Sb2Se3
Selenides
Selenium
Substrates
Thin films
Tin oxides
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Summary:Herein, Sb2Se3 thin films are obtained by the electrodeposition technique from a single bath on fluorine‐doped tin oxide (FTO) substrates. The electrodeposition conditions such as precursor concentration and applied potential, as well as the annealing temperature, and its influence on the structural, morphological, optical, and photoelectrochemical properties are analyzed. From the cyclic voltammetry measurements, the range of deposition potential is established and from the sweep rate variation, an irreversible and diffusion‐controlled process is assumed. With the chronoamperometric curves, an instantaneous nucleation is concluded. The Se/Sb ratio variation of the precursor solutions demonstrate that the 0.7 ratio is optimal to obtain Sb2Se3 stoichiometric thin films. The conductivity decreases with the increase of the deposition potential, while the highest photosensitivity is obtained with the film deposited at −0.75 V versus the saturated calomel electrode. Regarding the annealing temperature, a compact homogeneous film is obtained in the range from 325 to 425 °C. Therefore, the suitable properties of Sb2Se3 films obtained by electrodeposition and the establishment of optimized deposition conditions for its use in photoelectrochemical cells (PECs) are demonstrated. Herein, the authors successfully electrodeposit Sb2Se3 thin films on transparent conductive oxide substrates. The effects of the precursor bath composition, applied deposition potential, and annealing temperature on the structural, morphological, composition of the constituent elements, optical and electrical properties are investigated. The establishment of optimized deposition conditions for its use in photoelectrochemical cells (PECs) is demonstrated.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202200185