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Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
The structural properties and crystal quality of Al x Ga 1 ‒ x N/AlN/Al 2 O 3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the Al x Ga 1 ‒ x N:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2022-06, Vol.56 (6), p.352-359 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The structural properties and crystal quality of Al
x
Ga
1 ‒
x
N/AlN/Al
2
O
3
heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the Al
x
Ga
1 ‒
x
N:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It is shown that if AlN buffer layers of metal polarity contain inversion domains of nitrogen polarity, during subsequent growth of the Al
x
Ga
1 ‒
x
N:Si layers, inversion domains do not grow to the surface, but change their nitrogen polarity for metal polarity. At the place of AlN inversion domains, broadening Al
x
Ga
1 ‒
x
N columns of metal polarity grow, which coalesce in a homogeneous film with the Me-polar matrix surrounding them. The thickness corresponding to complete intergrowth increases with the Al content in the layers. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782622070077 |