Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers

The structural properties and crystal quality of Al x Ga 1 ‒  x N/AlN/Al 2 O 3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the Al x Ga 1 ‒  x N:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2022-06, Vol.56 (6), p.352-359
Main Authors: Osinnykh, I. V., Malin, T. V., Kozhukhov, A. S., Ber, B. Ya, Kazancev, D. Yu, Zhuravlev, K. S.
Format: Article
Language:English
Subjects:
Aluminum compounds
Aluminum gallium nitrides
Aluminum nitride
Aluminum oxide
Ammonia
Atomic force microscopy
Atomic properties
Buffer layers
Columns (structural)
Crystal structure
Domains
Epitaxial growth
Epitaxy
Heterostructures
Magnetic Materials
Magnetism
Molecular beam epitaxy
Nitrogen
Physics
Physics and Astronomy
Secondary ion mass spectrometry
Silicon
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Summary:The structural properties and crystal quality of Al x Ga 1 ‒  x N/AlN/Al 2 O 3 heterostructures grown by ammonia-assisted molecular-beam epitaxy with a high silicon concentration in the Al x Ga 1 ‒  x N:Si layers are studied by atomic force microscopy and dynamic secondary-ion mass spectrometry. It is shown that if AlN buffer layers of metal polarity contain inversion domains of nitrogen polarity, during subsequent growth of the Al x Ga 1 ‒  x N:Si layers, inversion domains do not grow to the surface, but change their nitrogen polarity for metal polarity. At the place of AlN inversion domains, broadening Al x Ga 1 ‒  x N columns of metal polarity grow, which coalesce in a homogeneous film with the Me-polar matrix surrounding them. The thickness corresponding to complete intergrowth increases with the Al content in the layers.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782622070077