LeTID sensitivity of gallium- & boron-doped Cz-Si PERC solar cells with an average conversion efficiency of 23.6

Within this work, both the performance and reliability of industrial Boron- and Gallium-doped p-type monocrystalline silicon solar cells with dielectrically passivated rear side with an average conversion efficiency of 23.6 % are investigated. Currently, in the p-type wafer market, mainly Gallium-do...

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Main Authors: Kersten, Friederike, Lantzsch, Ronny, Buschmann, Nora, Neumann, Yvonne, Petter, Kai, Kauert, Maximilian, Stenzel, Florian, Fertig, Fabian, Schönmann, Antje, Faulwetter-Quandt, Björn, Duncker, Klaus, Kim, Kyunghun, Jarzembowski, Enrico, Junghänel, Matthias, Weihrauch, Anika, Wasmer, Sven, Reiche, Björn, Klenke, Christian, Lee, Benjamin, Frühauf, Felix, Höger, Ingmar, Schaper, Martin, Müller, Jörg W., Jeong, Daniel J. W.
Format: Conference Proceeding
Language:English
Subjects:
Boron
Emitters
Gallium
High temperature
Modules
Photodegradation
Photovoltaic cells
Silicon
Solar cells
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Summary:Within this work, both the performance and reliability of industrial Boron- and Gallium-doped p-type monocrystalline silicon solar cells with dielectrically passivated rear side with an average conversion efficiency of 23.6 % are investigated. Currently, in the p-type wafer market, mainly Gallium-doped material is available. Only a few studies on the so-called “Light and elevated Temperature Induced Degradation” (LeTID) of this material are available in literature. It is advertised that the well-known degradation effect caused by boron-oxygen can be avoided by using gallium as dopant. This work shows that, if not adequately suppressed, LeTID can also occur in Gallium-doped p-type Czochralski silicon passivated emitter and rear solar cells with a degradation in cell and module output power of up to 3 %rel., which cannot be significantly suppressed in a straightforward manner by conventional processing steps to permanently deactivate the light- induced degradation defect. We demonstrate the possibility to reduce LeTID significantly on Boron- and Gallium-doped p-type monocrystalline solar cells and modules by adapting the cell process and processing sequence.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0089271