Preparation and characterization of epitaxially grown yttria-stabilized zirconia thin films on porous silicon substrates for solid oxide fuel cell applications

Epitaxial growth of yttria-stabilized zirconia (YSZ) thin film on through-hole-type porous silicon [tht-PSi(001)] with vertical pores penetrating from the surface to the back side of the Si(001) substrate was achieved. The in-plane and out-of-plane lattice parameters of YSZ thin film deposited on th...

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Bibliographic Details
Published in:Journal of the Ceramic Society of Japan 2022/07/01, Vol.130(7), pp.464-470
Main Authors: Zayasu, Haruki, Kawaguchi, Takahiko, Nakane, Hiroki, Koshida, Nobuyoshi, Shinozaki, Kazuo, Suzuki, Hisao, Sakamoto, Naonori, Wakiya, Naoki
Format: Article
Language:English
Subjects:
Cerium oxides
Dynamic aurora PLD
Electrical properties
Electrical resistivity
Epitaxial
Epitaxial growth
Ionic conduction
Lattice parameters
Partial pressure
Porous silicon
Silicon substrates
Solid oxide fuel cells
Strain
Tensile strain
Thin films
Through-hole-type porous silicon (tht-PSi)
Vertical penetration
Yttria-stabilized zirconia
Yttrium oxide
Yttrium stabilized zirconia (YSZ)
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Summary:Epitaxial growth of yttria-stabilized zirconia (YSZ) thin film on through-hole-type porous silicon [tht-PSi(001)] with vertical pores penetrating from the surface to the back side of the Si(001) substrate was achieved. The in-plane and out-of-plane lattice parameters of YSZ thin film deposited on the tht-PSi(001) were, respectively 0.5167 and 0.5124 nm. Therefore, 0.54 % tensile strain was applied to the YSZ thin film. Also for this work, an all epitaxially grown thin film of YSZ/La0.7Sr0.3MnO3(LSMO)/CeO2/YSZ/Si(001) was prepared. The out-of-plane lattice parameter of YSZ was 0.5145 nm. Therefore, the YSZ thin film of YSZ/LSMO/CeO2/YSZ/Si(001) is almost relaxed, with a small amount of tensile strain (0.12 %). In-plane and out-of-plane electrical properties were measured respectively for YSZ/tht-PSi(001) and YSZ/LSMO/CeO2/YSZ/Si(001) thin films. Results show that ionic conduction was confirmed at 400 °C through constant electric conductivity against the change of oxygen partial pressure (pO2). Enhanced ionic conduction was observed for epitaxial YSZ/tht-PSi(001) thin films measured along the in-plane direction. Such enhanced ionic conduction was not observed for epitaxial YSZ/LSMO/CeO2/YSZ/Si(001) thin films measured along the out-of-plane direction. These findings suggest that enhanced ionic conduction is correlated with tensile strain in YSZ thin films.
ISSN:1882-0743
1348-6535
DOI:10.2109/jcersj2.21178