A review of recent developments in aluminum gallium oxide thin films and devices

Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughl...

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Bibliographic Details
Published in:Critical reviews in solid state and materials sciences 2022-07, Vol.47 (4), p.538-569
Main Authors: Saikumar, Ashwin Kumar, Nehate, Shraddha Dhanraj, Sundaram, Kalpathy B.
Format: Article
Language:English
Subjects:
AGO
Aluminum
aluminum gallium oxide
applications
deposition
Electrical properties
Gallium
Gallium oxides
optical devices
Optical properties
Oxide coatings
Parameters
power devices
properties
review
Thin films
Wide bandgap semiconductors
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Summary:Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughly summarize the recent developments in AGO growth, properties, and applications. Deposition techniques and the influence of synthesis parameters on AGO film are examined. Properties of AGO are influenced by the growth techniques and parameters, which promote the AGO films to be employed in desired applications. Electrical properties, optical properties, and morphological studies are discussed in detail. Finally, summary and future perspectives are identified.
ISSN:1040-8436
1547-6561
2331-4583
DOI:10.1080/10408436.2021.1922357