Temperature Dependence of Hall–Petch Parameters Using In Situ Diffraction Experiments in AZ31 Alloy

The temperature evolution of the Hall–Petch parameters for basal slip and twinning systems has been evaluated for the AZ31 alloy, using synchrotron radiation diffraction during compression tests from room temperature to 473 K. The AZ31 alloy was processed following two processing routes, casting and...

Full description

Saved in:
Bibliographic Details
Published in:JOM (1989) 2022-07, Vol.74 (7), p.2622-2634
Main Authors: Garces, G., Clemente, A., Medina, J., Perez, P., Stark, A., Schell, N., Adeva, P.
Format: Article
Language:English
Subjects:
Chemistry/Food Science
Compression tests
Deformation
Diffraction
Earth Sciences
Engineering
Environment
Experiments
Grain size
In-situ Methods for Understanding Deformation & MS Evolution in Mg Alloys
Low temperature
Magnesium alloys
Magnesium base alloys
Parameters
Physics
Powder metallurgy
Radiation
Room temperature
Slip
Synchrotron radiation
Synchrotrons
Systems analysis
Temperature
Temperature dependence
Twinning
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The temperature evolution of the Hall–Petch parameters for basal slip and twinning systems has been evaluated for the AZ31 alloy, using synchrotron radiation diffraction during compression tests from room temperature to 473 K. The AZ31 alloy was processed following two processing routes, casting and powder metallurgy, to obtain two different grain sizes with a similar strong fiber texture. Although macroscopic plasticity is controlled by tensile twinning, the stress for the activation of basal slip can also be calculated. At low temperatures, the grain size dependence of twinning is much higher than that for basal slip. However, basal slip prevails at 473 K, especially for the alloy processed through the powder metallurgy route, because of the low tendency for twinning deformation.
ISSN:1047-4838
1543-1851
DOI:10.1007/s11837-022-05320-1