Roughness simulation for thin films prepared by atomic layer deposition

The kinetic lattice Monte Carlo method for film growth simulation without taking crystallization into account was applied to study the roughness of the HfO2 film grown by atomic layer deposition at 100–500°C from HfCl4 and H2O. The calculations were performed using a simplified kinetic mechanism of...

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Bibliographic Details
Published in:Russian journal of physical chemistry. B 2007-04, Vol.1 (2), p.102-112
Main Authors: Iskandarova, I. M., Knizhnik, A. A., Belov, I. V., Rykova, E. A., Bagatur’yants, A. A., Umanskii, S. Ya, Potapkin, B. V., Stoker, M. W.
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Crystallization
Film growth
Hafnium compounds
Hafnium oxide
Mathematical analysis
Monte Carlo simulation
Process parameters
Quantum chemistry
Roughness
Thin films
Zirconium dioxide
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Summary:The kinetic lattice Monte Carlo method for film growth simulation without taking crystallization into account was applied to study the roughness of the HfO2 film grown by atomic layer deposition at 100–500°C from HfCl4 and H2O. The calculations were performed using a simplified kinetic mechanism of the growth of HfO2 films obtained by reducing the detailed kinetic mechanism developed earlier. Ab initio quantum-chemical calculations were performed to determine the kinetic parameters of diffusion processes on the surface of hafnium oxide that could influence film roughness. Because of the special features of atomic layer deposition, the rate of film growth and film roughness were finite even if surface relaxation was ignored. It was found that, irrespective of the temperature, the diffusion of hydrogen and adsorbed HfCl4 complexes did not change the profile of the growing film and only insignificantly increased the mean rate of growth. The results obtained were also qualitatively applicable to zirconium dioxide at fairly low (≤100°C) temperatures in the absence of crystallization.
ISSN:1990-7931
1990-7923
DOI:10.1134/S1990793107020042