Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Amorphous indium gallium zinc oxide (a‐IGZO) thin‐film quality can be enhanced using supercritical carbon dioxide (SCCO2). How to verify specific and accurate mechanism for the carriers inside an a‐IGZO layer before and after the SCCO2 treatment is worth investigating. This work designs a‐IGZO thin...

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Bibliographic Details
Published in:Advanced materials interfaces 2022-05, Vol.9 (14), p.n/a
Main Authors: Zhang, Jiaona, Zhang, Min, Chang, Kuan‐Chang, Rong, Zhao, Zhang, Yuqing, Zhang, Shengdong, Chan, Mansun
Format: Article
Language:English
Subjects:
amorphous indium gallium zinc oxide
CAD
Carbon dioxide
carrier behavior
Carrier density
Carrier transport
Computer aided design
Energy bands
Gallium
Indium
Indium gallium zinc oxide
oxygen vacancy
Photoelectrons
Semiconductor devices
supercritical carbon dioxide treatment
Thickness
Thin film transistors
transistor characteristics
Zinc oxide
Zinc oxides
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Summary:Amorphous indium gallium zinc oxide (a‐IGZO) thin‐film quality can be enhanced using supercritical carbon dioxide (SCCO2). How to verify specific and accurate mechanism for the carriers inside an a‐IGZO layer before and after the SCCO2 treatment is worth investigating. This work designs a‐IGZO thin film transistors with different channel thicknesses (41, 28, and 19 nm), treats them using SCCO2, and analyzes the change in carrier behavior. The effect of the SCCO2 on both carrier density and carrier transport is investigated using energy band information, Technology Computer Aided Design (TCAD) simulations on density of states and resistance analyses. After the treatment, the thinner channel thickness exhibits better drivability enhancement. That is because of the fewer traps and smoother carrier transportation path resulted from better M−O−M frameworks, and decreased M−OH bonds as well as interface charges. Besides the traditional analysis methods and TCAD simulations, layer‐by‐layer X‐ray photoelectron spectroscopy and sheet resistance measurement are also applied to verify the detailed carrier mechanism behind different phenomena. This work demonstrates that the increased oxygen vacancies inside amorphous indium gallium zinc oxide (a‐IGZO) after supercritical carbon dioxide treatment are mainly carriers, and the vacancy‐related traps are decreased. Carriers in thicker a‐IGZO film are more difficult to transport after the treatment than those in original film as more scattering occurs.
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.202102349