Structure, morphology, and local photoelectrical characterization of PbS films grown by SILAR

•Cubic PbS films with SO42− impurities due to increasing deposition cycles were obtained.•Raman band at 138 cm−1 is caused by large islands in the Straski-Krastanov mode.•Films display photocurrent response and a bandgap ca. 0.65 eV. In this work, the structure, morphology, and local electrical prop...

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Bibliographic Details
Published in:Materials letters 2022-05, Vol.314, p.131844, Article 131844
Main Authors: Woo-García, R.M., Herrera-May, Agustin L., García-González, L., Martínez-Cervantes, L., Caballero-Briones, F., López-Huerta, F., Guarneros-Aguilar, C.
Format: Article
Language:English
Subjects:
Deposition
Electrical properties
Film thickness
Glass substrates
Island growth
Lead sulfide
Lead sulfides
Materials science
Morphology
Oxidation
Photoelectricity
Raman spectra
SILAR
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Summary:•Cubic PbS films with SO42− impurities due to increasing deposition cycles were obtained.•Raman band at 138 cm−1 is caused by large islands in the Straski-Krastanov mode.•Films display photocurrent response and a bandgap ca. 0.65 eV. In this work, the structure, morphology, and local electrical properties of lead sulfide films growth by Successive Ionic Layer Adsorption and Reaction was studied. Films were deposited from 100 to 500 cycles onto glass substrates. Film thickness increase from 100 to 800 nm with the number of deposition cycles. The deposited films are single phase, cubic PbS. Raman spectra present a band at 969 cm−1 arising from surface oxidation during deposition, as well as a band at 138 cm−1 related with the growth mode. Films prepared at 100 cycles have a mixed layer-island growth mode, while the films prepared at 200 and 500 cycles have granular morphologies with voids. The local electrical characterization indicates that films electrical and photo response depend on the film morphology.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2022.131844