Impact of Mole Fraction Variation on the Analog/RF Performance of Quaternary InAlGaN DG MOS-HEMTs

In this paper, the analog and radio-frequency (RF) performance of a symmetric underlapped quaternary InAlGaN double-gated metal oxide semiconductor high-electron-mobility transistor (MOS-HEMT) with varying mole fractions of indium, aluminum, and gallium is presented. The mole fraction of aluminum (...

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Bibliographic Details
Published in:Journal of electronic materials 2022-05, Vol.51 (5), p.2608-2616
Main Authors: Ghosh, Sushmita, Bagla, Gautam, Mukherjee, Hrit, Kar, Mousiki, Kundu, Atanu
Format: Article
Language:English
Subjects:
Aluminum
Capacitance
Characterization and Evaluation of Materials
Chemistry and Materials Science
Conduction bands
Electronics and Microelectronics
Gallium
High electron mobility transistors
Indium
Instrumentation
Materials Science
Metal oxide semiconductors
MOS devices
Optical and Electronic Materials
Original Research Article
Radio frequency
Semiconductor devices
Solid State Physics
Transconductance
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Summary:In this paper, the analog and radio-frequency (RF) performance of a symmetric underlapped quaternary InAlGaN double-gated metal oxide semiconductor high-electron-mobility transistor (MOS-HEMT) with varying mole fractions of indium, aluminum, and gallium is presented. The mole fraction of aluminum ( x ) is fixed at 0.06 and that of indium ( y ) is varied from 0.01 to 0.10 at four different values. The analog parameters explored are drain current density ( I d ), transconductance ( g m ), intrinsic gain ( g m r 0 ), and transconductance generation factor ( g m / I d ). The device shows a certain trend for 0.01 ≤ y ≤ 0.04 and reverses for 0.04 ≤ y ≤ 0.10. Relative evaluation of the conduction band energy (CBE) profile is used to decipher the reason behind this. The RF performance is also assessed using the figures of merit (FOMs) including gate-to-source capacitance ( C gs ), gate-to-drain capacitance ( C gd ), total gate capacitance ( C gg ), cutoff frequency ( f T ), and the maximum frequency of oscillation ( f max ).
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-022-09533-7