Topology of PbSnTe:In Layers Versus Indium Concentration

The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb 1 – x Sn x Te:In) has been examined using atomic force microscopy. The films have been grown on BaF 2 (111) single-crystal substrates and on a CaF 2 /BaF 2 buffer layer covering a Si(111) waf...

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Bibliographic Details
Published in:Technical physics 2021-07, Vol.66 (7), p.878-882
Main Authors: Ishchenko, D. V., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Klimov, A. E., Loginov, A. B., Loginov, B. A., Pashchin, N. S., Tarasov, A. S., Fedosenko, E. V., Sherstyakova, V. N.
Format: Article
Language:English
Subjects:
Atomic force microscopy
Barium fluorides
Buffer layers
Classical and Continuum Physics
Epitaxy
Film growth
Indium
Physics
Physics and Astronomy
Single crystals
Solid solutions
Substrates
Tin tellurides
Topology
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Summary:The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb 1 – x Sn x Te:In) has been examined using atomic force microscopy. The films have been grown on BaF 2 (111) single-crystal substrates and on a CaF 2 /BaF 2 buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784221060086